Determination of the valence band dispersions for Bi2Se3 using angle resolved photoemission

V. A. Greanya*, W. C. Tonjes, Rong Liu, C. G. Olson, D. Y. Chung, M. G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


The valence band dispersions for Bi2Se3 were determined using angle resolved photoelectron spectroscopy. The valence band maximum was found to be located at the γ point and was nondegenerate. The low k-space degeneracy of the valence band maximum (VBM) and the lesser degree of the anisotropy accounted for these materials poor thermoelectric properties as compared to that of Bi2Te3.

Original languageEnglish (US)
Pages (from-to)6658-6661
Number of pages4
JournalJournal of Applied Physics
Issue number11
StatePublished - Dec 1 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Determination of the valence band dispersions for Bi<sub>2</sub>Se<sub>3</sub> using angle resolved photoemission'. Together they form a unique fingerprint.

Cite this