Development of GaN photocathodes for UV detectors

O. Siegmund*, J. Vallerga, J. McPhate, J. Malloy, A. Tremsin, A. Martin, M. Ulmer, B. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70% and cutoffs at ∼380 nm with low out of band response, and high stability and longevity. Samples have been processed and tested at ultra high vacuum to establish cathode process parameters, and some have been integrated into sealed tubes for long-term evaluation.

Original languageEnglish (US)
Pages (from-to)89-92
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume567
Issue number1 SPEC. ISS.
DOIs
StatePublished - Nov 1 2006

Keywords

  • Gallium nitride
  • Photocathode
  • Ultraviolet

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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