Development of GaN photocathodes for UV detectors

O. Siegmund; J. Vallerga; J. McPhate; J. Malloy; A. Tremsin; A. Martin; M. Ulmer; B. Wessels

doi:10.1016/j.nima.2006.05.117

Development of GaN photocathodes for UV detectors

O. Siegmund^*, J. Vallerga, J. McPhate, J. Malloy, A. Tremsin, A. Martin, M. Ulmer, B. Wessels

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

88 Scopus citations

Abstract

We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70% and cutoffs at ∼380 nm with low out of band response, and high stability and longevity. Samples have been processed and tested at ultra high vacuum to establish cathode process parameters, and some have been integrated into sealed tubes for long-term evaluation.

Original language	English (US)
Pages (from-to)	89-92
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	567
Issue number	1 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nima.2006.05.117
State	Published - Nov 1 2006

Keywords

Gallium nitride
Photocathode
Ultraviolet

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2006.05.117

Cite this

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title = "Development of GaN photocathodes for UV detectors",

abstract = "We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70% and cutoffs at ∼380 nm with low out of band response, and high stability and longevity. Samples have been processed and tested at ultra high vacuum to establish cathode process parameters, and some have been integrated into sealed tubes for long-term evaluation.",

keywords = "Gallium nitride, Photocathode, Ultraviolet",

author = "O. Siegmund and J. Vallerga and J. McPhate and J. Malloy and A. Tremsin and A. Martin and M. Ulmer and B. Wessels",

note = "Funding Information: This work was supported by NASA Grants NAG5-12710 and NAG5-11547. We would like to thank Dr. B. Han and Dr. J. Gregie for development of GaN samples. ",

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doi = "10.1016/j.nima.2006.05.117",

language = "English (US)",

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T1 - Development of GaN photocathodes for UV detectors

AU - Siegmund, O.

AU - Vallerga, J.

AU - McPhate, J.

AU - Malloy, J.

AU - Tremsin, A.

AU - Martin, A.

AU - Ulmer, M.

AU - Wessels, B.

N1 - Funding Information: This work was supported by NASA Grants NAG5-12710 and NAG5-11547. We would like to thank Dr. B. Han and Dr. J. Gregie for development of GaN samples.

PY - 2006/11/1

Y1 - 2006/11/1

N2 - We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70% and cutoffs at ∼380 nm with low out of band response, and high stability and longevity. Samples have been processed and tested at ultra high vacuum to establish cathode process parameters, and some have been integrated into sealed tubes for long-term evaluation.

AB - We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70% and cutoffs at ∼380 nm with low out of band response, and high stability and longevity. Samples have been processed and tested at ultra high vacuum to establish cathode process parameters, and some have been integrated into sealed tubes for long-term evaluation.

KW - Gallium nitride

KW - Photocathode

KW - Ultraviolet

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SP - 89

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1 SPEC. ISS.

ER -

Development of GaN photocathodes for UV detectors

Abstract

Keywords

ASJC Scopus subject areas

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