Development of high-performance III-Nitride-based semiconductor devices

Manijeh Razeghi*, P. Kung, D. Walker, E. Monroy, M. Hamilton, P. Sandvik

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In the past decade, research work in AlGaInN wide band gap semiconductors has continuously intensified, mainly because of their exceptional expected material properties which make them the ideal materials for numerous devices, including solar blind ultraviolet photodetectors. In this paper, the growth and characterization of AlGaInN thin films on sapphire and silicon substrates by metalorganic chemical vapor deposition is presented. The fabrication and testing results of GaN and AlxGa1-xN based ultraviolet photodetectors are discussed, including high speed low noise GaN based Schottky metal-semiconductor-metal photodetectors with high ratio of rejection of visible light to UV light, high visible blindness GaN p-i-n photodiodes, AlxGa1-xN photoconductors in the entire Al compositional range, and the first AlxGa1-xN p-i-n photodiodes (0 ≤ x ≤ 0.15) ever reported. Finally, in an on-going effort to improve the quality of AlGaInN materials, the LEO growth and characterization of low defect density GaN films on both (00.1) sapphire and (111) silicon substrates is described.

Original languageEnglish (US)
JournalJournal of the Korean Physical Society
Volume34
Issue numberSUPPL. 3
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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