Development of high power, InP-based quantum cascade lasers on alternative epitaxial platforms

Steven Boyd Slivken, Nirajman Shrestha, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this talk, challenges and solutions associated with the monolithic, epitaxial integration of mid- and longwave- infrared, InP-based quantum cascade lasers on GaAs and Si wafers will be discussed. Initial results, including room temperature, high power, and continuous wave operation, will be described.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nano Electronics and Photonics XX
EditorsManijeh Razeghi, Giti A. Khodaparast, Miriam S. Vitiello
PublisherSPIE
ISBN (Electronic)9781510670501
DOIs
StatePublished - 2024
EventQuantum Sensing and Nano Electronics and Photonics XX 2024 - San Francisco, United States
Duration: Jan 28 2024Feb 1 2024

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume12895
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceQuantum Sensing and Nano Electronics and Photonics XX 2024
Country/TerritoryUnited States
CitySan Francisco
Period1/28/242/1/24

Funding

This material is based upon work supported by the Naval Air Warfare Center Weapons Division, China Lake, CA under Contract No N6893622C0023. This work is also partially supported by the National Science Foundation under Grant No. ECCS-2149908.

Keywords

  • Quantum cascade laser
  • heteroepitaxy
  • monolithic integration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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