Development of quantum well infrared photodetectors at the Center for Quantum Devices

M. Razeghi*, M. Erdtmann, C. Jelen, F. Guastavinos, G. J. Brown, Y. S. Park

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to GaAs or InP substrate. p-Type GaAs/GaInP QWIPs show background limited performance up to temperatures of 120 K, while p-type GaInAsP/GaInAsP QWIPs exhibit broadband response from λ=2.5-10μm. n-Type GaAs/GaInP QWIPs are sensitive deep into the VLWIR with very low dark current. Extremely large responsivities of 33.2 AW-1 were obtained from n-type GaInAs/InP QWIPs operating at λ=9μm. Devices made from n-type AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 and 8.5 μm. Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry.

Original languageEnglish (US)
Pages (from-to)135-148
Number of pages14
JournalInfrared Physics and Technology
Volume42
Issue number3-5
DOIs
StatePublished - Jun 1 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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