Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of III-V material systems lattice-matched to GaAs or InP substrate. p-Type GaAs/GaInP QWIPs show background limited performance up to temperatures of 120 K, while p-type GaInAsP/GaInAsP QWIPs exhibit broadband response from λ=2.5-10μm. n-Type GaAs/GaInP QWIPs are sensitive deep into the VLWIR with very low dark current. Extremely large responsivities of 33.2 AW-1 were obtained from n-type GaInAs/InP QWIPs operating at λ=9μm. Devices made from n-type AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 and 8.5 μm. Localized epitaxy of GaInAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of III-V QWIPs with Si-based read-out integrated circuitry.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics