Development of ultra-low impedance Through-wafer Micro-vias

F. M. Finkbeiner; C. Adams; E. Apodaca; J. A. Chervenak; J. Fischer; N. Doan; M. J. Li; C. K. Stahle; R. P. Brekosky; S. R. Bandler; E. Figueroa-Feliciano; M. A. Lindeman; R. L. Kelley; T. Saab; D. J. Talley

doi:10.1016/j.nima.2003.11.373

Development of ultra-low impedance Through-wafer Micro-vias

F. M. Finkbeiner^*, C. Adams, E. Apodaca, J. A. Chervenak, J. Fischer, N. Doan, M. J. Li, C. K. Stahle, R. P. Brekosky, S. R. Bandler, E. Figueroa-Feliciano, M. A. Lindeman, R. L. Kelley, T. Saab, D. J. Talley

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Concurrent with our microcalorimeter array fabrication for Constellation-X technology development, we are developing ultra-low impedance Through-Wafer Micro-Vias (TWMV) as electrical interconnects for superconducting circuits. The TWMV will enable the electrical contacts of each detector to be routed to contacts on the backside of the array. There, they can be bump-bonded to a wiring fan-out board which interfaces with the front-end Superconducting Quantum Interference Device readout. We are concentrating our developmental efforts on ultra-low impedance copper and superconducting aluminum TWMV in 300-400 micron thick silicon wafers. For both schemes, a periodic pulse-reverse electroplating process is used to fill or coat micron-scale through-wafer holes of aspect ratios up to 20. Here we discuss the design, fabrication process, and recent electro-mechanical test results of Al and Cu TWMV at room and cryogenic temperatures.

Original language	English (US)
Pages (from-to)	463-465
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	520
Issue number	1-3
DOIs	https://doi.org/10.1016/j.nima.2003.11.373
State	Published - Mar 11 2004

Keywords

Cryogenic temperatures
High-aspect ratio etching
PPR electro-deposition
Through-Wafer Micro-Via

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2003.11.373

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Finkbeiner, F. M., Adams, C., Apodaca, E., Chervenak, J. A., Fischer, J., Doan, N., Li, M. J., Stahle, C. K., Brekosky, R. P., Bandler, S. R., Figueroa-Feliciano, E., Lindeman, M. A., Kelley, R. L., Saab, T., & Talley, D. J. (2004). Development of ultra-low impedance Through-wafer Micro-vias. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1-3), 463-465. https://doi.org/10.1016/j.nima.2003.11.373

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title = "Development of ultra-low impedance Through-wafer Micro-vias",

abstract = "Concurrent with our microcalorimeter array fabrication for Constellation-X technology development, we are developing ultra-low impedance Through-Wafer Micro-Vias (TWMV) as electrical interconnects for superconducting circuits. The TWMV will enable the electrical contacts of each detector to be routed to contacts on the backside of the array. There, they can be bump-bonded to a wiring fan-out board which interfaces with the front-end Superconducting Quantum Interference Device readout. We are concentrating our developmental efforts on ultra-low impedance copper and superconducting aluminum TWMV in 300-400 micron thick silicon wafers. For both schemes, a periodic pulse-reverse electroplating process is used to fill or coat micron-scale through-wafer holes of aspect ratios up to 20. Here we discuss the design, fabrication process, and recent electro-mechanical test results of Al and Cu TWMV at room and cryogenic temperatures.",

keywords = "Cryogenic temperatures, High-aspect ratio etching, PPR electro-deposition, Through-Wafer Micro-Via",

author = "Finkbeiner, {F. M.} and C. Adams and E. Apodaca and Chervenak, {J. A.} and J. Fischer and N. Doan and Li, {M. J.} and Stahle, {C. K.} and Brekosky, {R. P.} and Bandler, {S. R.} and E. Figueroa-Feliciano and Lindeman, {M. A.} and Kelley, {R. L.} and T. Saab and Talley, {D. J.}",

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doi = "10.1016/j.nima.2003.11.373",

language = "English (US)",

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Finkbeiner, FM, Adams, C, Apodaca, E, Chervenak, JA, Fischer, J, Doan, N, Li, MJ, Stahle, CK, Brekosky, RP, Bandler, SR, Figueroa-Feliciano, E, Lindeman, MA, Kelley, RL, Saab, T & Talley, DJ 2004, 'Development of ultra-low impedance Through-wafer Micro-vias', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 520, no. 1-3, pp. 463-465. https://doi.org/10.1016/j.nima.2003.11.373

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AU - Finkbeiner, F. M.

AU - Adams, C.

AU - Apodaca, E.

AU - Chervenak, J. A.

AU - Fischer, J.

AU - Doan, N.

AU - Li, M. J.

AU - Stahle, C. K.

AU - Brekosky, R. P.

AU - Bandler, S. R.

AU - Figueroa-Feliciano, E.

AU - Lindeman, M. A.

AU - Kelley, R. L.

AU - Saab, T.

AU - Talley, D. J.

PY - 2004/3/11

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N2 - Concurrent with our microcalorimeter array fabrication for Constellation-X technology development, we are developing ultra-low impedance Through-Wafer Micro-Vias (TWMV) as electrical interconnects for superconducting circuits. The TWMV will enable the electrical contacts of each detector to be routed to contacts on the backside of the array. There, they can be bump-bonded to a wiring fan-out board which interfaces with the front-end Superconducting Quantum Interference Device readout. We are concentrating our developmental efforts on ultra-low impedance copper and superconducting aluminum TWMV in 300-400 micron thick silicon wafers. For both schemes, a periodic pulse-reverse electroplating process is used to fill or coat micron-scale through-wafer holes of aspect ratios up to 20. Here we discuss the design, fabrication process, and recent electro-mechanical test results of Al and Cu TWMV at room and cryogenic temperatures.

AB - Concurrent with our microcalorimeter array fabrication for Constellation-X technology development, we are developing ultra-low impedance Through-Wafer Micro-Vias (TWMV) as electrical interconnects for superconducting circuits. The TWMV will enable the electrical contacts of each detector to be routed to contacts on the backside of the array. There, they can be bump-bonded to a wiring fan-out board which interfaces with the front-end Superconducting Quantum Interference Device readout. We are concentrating our developmental efforts on ultra-low impedance copper and superconducting aluminum TWMV in 300-400 micron thick silicon wafers. For both schemes, a periodic pulse-reverse electroplating process is used to fill or coat micron-scale through-wafer holes of aspect ratios up to 20. Here we discuss the design, fabrication process, and recent electro-mechanical test results of Al and Cu TWMV at room and cryogenic temperatures.

KW - Cryogenic temperatures

KW - High-aspect ratio etching

KW - PPR electro-deposition

KW - Through-Wafer Micro-Via

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IS - 1-3

ER -

Development of ultra-low impedance Through-wafer Micro-vias

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Keywords

ASJC Scopus subject areas

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