Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models

Carlo Cercignani, Irene M. Gamba*, Joseph W Jerome, Chi Wang Shu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

This paper describes benchmark comparisons for a GaAs n+-n-n+ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.

Original languageEnglish (US)
Pages (from-to)381-392
Number of pages12
JournalComputer Methods in Applied Mechanics and Engineering
Volume181
Issue number4
DOIs
StatePublished - Jan 21 2000

Keywords

  • Augmented drift-diffusion
  • Domain decomposition
  • High-field model
  • Hydrodynamic model
  • Kinetic model

ASJC Scopus subject areas

  • Computational Mechanics
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Computer Science Applications

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