Abstract
This paper describes benchmark comparisons for a GaAs n+-n-n+ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.
Original language | English (US) |
---|---|
Pages (from-to) | 381-392 |
Number of pages | 12 |
Journal | Computer Methods in Applied Mechanics and Engineering |
Volume | 181 |
Issue number | 4 |
DOIs | |
State | Published - Jan 21 2000 |
Keywords
- Augmented drift-diffusion
- Domain decomposition
- High-field model
- Hydrodynamic model
- Kinetic model
ASJC Scopus subject areas
- Computational Mechanics
- Mechanics of Materials
- Mechanical Engineering
- Physics and Astronomy(all)
- Computer Science Applications