Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models

Carlo Cercignani; Irene M. Gamba; Joseph W Jerome; Chi Wang Shu

doi:10.1016/S0045-7825(99)00186-3

Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models

Carlo Cercignani, Irene M. Gamba^*, Joseph W Jerome, Chi Wang Shu

^*Corresponding author for this work

Mathematics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

This paper describes benchmark comparisons for a GaAs n⁺-n-n⁺ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.

Original language	English (US)
Pages (from-to)	381-392
Number of pages	12
Journal	Computer Methods in Applied Mechanics and Engineering
Volume	181
Issue number	4
DOIs	https://doi.org/10.1016/S0045-7825(99)00186-3
State	Published - Jan 21 2000

Keywords

Augmented drift-diffusion
Domain decomposition
High-field model
Hydrodynamic model
Kinetic model

ASJC Scopus subject areas

Computational Mechanics
Mechanics of Materials
Mechanical Engineering
Physics and Astronomy(all)
Computer Science Applications

Access to Document

10.1016/S0045-7825(99)00186-3

Fingerprint Dive into the research topics of 'Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models'. Together they form a unique fingerprint.

Cite this

@article{8191cbe7657a4bb8aa7c50ff40ea4931,

title = "Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models",

abstract = "This paper describes benchmark comparisons for a GaAs n+-n-n+ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.",

keywords = "Augmented drift-diffusion, Domain decomposition, High-field model, Hydrodynamic model, Kinetic model",

author = "Carlo Cercignani and Gamba, {Irene M.} and Jerome, {Joseph W} and Shu, {Chi Wang}",

year = "2000",

month = jan,

day = "21",

doi = "10.1016/S0045-7825(99)00186-3",

language = "English (US)",

volume = "181",

pages = "381--392",

journal = "Computer Methods in Applied Mechanics and Engineering",

issn = "0374-2830",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models

AU - Cercignani, Carlo

AU - Gamba, Irene M.

AU - Jerome, Joseph W

AU - Shu, Chi Wang

PY - 2000/1/21

Y1 - 2000/1/21

N2 - This paper describes benchmark comparisons for a GaAs n+-n-n+ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.

AB - This paper describes benchmark comparisons for a GaAs n+-n-n+ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.

KW - Augmented drift-diffusion

KW - Domain decomposition

KW - High-field model

KW - Hydrodynamic model

KW - Kinetic model

UR - http://www.scopus.com/inward/record.url?scp=0033640331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033640331&partnerID=8YFLogxK

U2 - 10.1016/S0045-7825(99)00186-3

DO - 10.1016/S0045-7825(99)00186-3

M3 - Article

AN - SCOPUS:0033640331

VL - 181

SP - 381

EP - 392

JO - Computer Methods in Applied Mechanics and Engineering

JF - Computer Methods in Applied Mechanics and Engineering

SN - 0374-2830

IS - 4

ER -