Device design for global shutter operation in a 1.1-μm pixel image sensor and its application to near infrared sensing

Zach M. Beiley, Robin Cheung, Erin F. Hanelt, Emanuele Mandelli, Jet Meitzner, Jae Park, Andras Pattantyus-Abraham, Edward H. Sargent

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Global shutter is a feature of some CMOS image sensors that allows capture of an entire image at a single point in time. We discuss how the device architecture of InVisage's QuantumFilm enables global shutter operation by controlling the bias on the device stack without an additional transistor, giving high shutter efficiency in a 1.1 μm pixel CMOS image sensor. We use drift-diffusion device simulations to inform our design and reveal device and material properties that are key for carrier selectivity. Based on our device model, we fabricated global-shutter-enabled QuantumFilm devices for near infrared sensing applications and present a characterization of our devices.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXV
EditorsBernd Witzigmann, Marek Osinski, Yasuhiko Arakawa
PublisherSPIE
ISBN (Electronic)9781510606371
DOIs
StatePublished - 2017
EventPhysics and Simulation of Optoelectronic Devices XXV - San Francisco, United States
Duration: Jan 30 2017Feb 2 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10098
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XXV
Country/TerritoryUnited States
CitySan Francisco
Period1/30/172/2/17

Keywords

  • CMOS image sensor
  • carrier selective contacts
  • global shutter
  • near infrared
  • quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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