Diameter and polarization-dependent raman scattering intensities of semiconductor nanowires

Francisco J. Lopez*, Jerome K. Hyun, Uri Givan, In Soo Kim, Aaron L. Holsteen, Lincoln J. Lauhon

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed.

Original languageEnglish (US)
Pages (from-to)2266-2271
Number of pages6
JournalNano letters
Issue number5
StatePublished - May 9 2012


  • FDTD
  • Nanowire
  • Raman
  • modeling
  • optical properties

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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