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Diamond growth on carbide surfaces using a selective etching technique
K. J. Grannen,
R. P.H. Chang
Materials Science and Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
24
Scopus citations
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INIS
diamonds
83%
growth
66%
surfaces
66%
films
50%
atoms
50%
etching
50%
carbides
50%
carbon
33%
fluorine
33%
nucleation
33%
scanning electron microscopy
16%
morphology
16%
plasma
16%
substrates
16%
gases
16%
raman spectroscopy
16%
silicon carbides
16%
hydrogen
16%
cobalt
16%
chemical vapor deposition
16%
powders
16%
microwave radiation
16%
tungsten carbides
16%
Physics
Growth
66%
Carbide
50%
Atoms
50%
Etching
50%
Diamonds
50%
Diamond Films
33%
Scanning Electron Microscopy
16%
Raman Spectroscopy
16%
Hydrogen
16%
Cobalt
16%
Silicon Carbide
16%
Tungsten Carbide
16%
Gases
16%
Substrates
16%
Microwave
16%
Material Science
Nucleation
100%
Etching
50%
Diamond Films
33%
Surface
33%
Surface Morphology
16%
Carbon Surface
16%
Plasma-Enhanced Chemical Vapor Deposition
16%
Film
16%
Gas
16%
Powder
16%
Biochemistry, Genetics and Molecular Biology
Growth
66%
Surface Property
66%
Atom
50%
Vapor
16%
Morphology
16%
Gas
16%
Cobalt
16%
Scanning Electron Microscopy
16%
Raman Spectroscopy
16%
Powder
16%