TY - JOUR
T1 - Diamond Nucleation on Surfaces Using Carbon Clusters
AU - Mcilunasa, R. J.
AU - Chang, R. P.H.
N1 - Funding Information:
This research was supported by the Department of Energy under Contract No. DE-FG02-87ER45314 and the Office of Naval Research. This work made use of MRL central facilities supported by the National Science Foundation, at the Materials Research Center at Northwestern University, under award number DMR-9120521.
PY - 1994/9
Y1 - 1994/9
N2 - Thin solid films of C6o and C70 have been used as nucieating layers for the growth of diamond thin films on a variety of substrate surfaces, including metal, insulator, and semiconductors. Compared to other forms of carbon, such as graphite, amorphous carbon, soot, etc., it is found that the nucleation density on a C70 film is equivalent to that of diamond seeds themselves. On the other hand, diamond nucleation on a C6o film is less favorable. We argue from our experiments that the reason for C70 film to have such favorable nucieating properties is its chemical stability and geometry. A working model is proposed to explain the nucleation of diamond on solid C70 films. Application of this work extending to the growth of diamond on a wide range of substrates is also discussed.
AB - Thin solid films of C6o and C70 have been used as nucieating layers for the growth of diamond thin films on a variety of substrate surfaces, including metal, insulator, and semiconductors. Compared to other forms of carbon, such as graphite, amorphous carbon, soot, etc., it is found that the nucleation density on a C70 film is equivalent to that of diamond seeds themselves. On the other hand, diamond nucleation on a C6o film is less favorable. We argue from our experiments that the reason for C70 film to have such favorable nucieating properties is its chemical stability and geometry. A working model is proposed to explain the nucleation of diamond on solid C70 films. Application of this work extending to the growth of diamond on a wide range of substrates is also discussed.
UR - http://www.scopus.com/inward/record.url?scp=0028342058&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028342058&partnerID=8YFLogxK
U2 - 10.1557/JMR.1994.0061
DO - 10.1557/JMR.1994.0061
M3 - Article
AN - SCOPUS:0028342058
SN - 0884-2914
VL - 9
SP - 61
EP - 79
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 1
ER -