Dielectric interface effects in subsurface microscopy of integrated circuits

F. Hakan Köklü*, Bennett B. Goldberg, M. Selim Ünlü

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We investigate the defocus and image quality affected by a dielectric interface on high numerical aperture focusing of linearly polarized illumination in aplanatic mode. Theoretical and experimental demonstration is performed on subsurface backside microscopy of silicon integrated circuits, showing that the high longitudinal magnification provided by solid immersion lens microscopy allows the observation of significant astigmatism. It is shown that a 50 micron longitudinal displacement of the objective lens with respect to the sample is necessary to achieve maximum resolutions in two directions.

Original languageEnglish (US)
Pages (from-to)1675-1679
Number of pages5
JournalOptics Communications
Volume285
Issue number7
DOIs
StatePublished - Apr 1 2012

Keywords

  • Diffraction limit
  • Numerical aperture
  • Polarization
  • Solid immersion
  • Spatial resolution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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