Dielectric interface effects in subsurface microscopy of integrated circuits

F. Hakan Köklü; Bennett B. Goldberg; M. Selim Ünlü

doi:10.1016/j.optcom.2011.12.050

Dielectric interface effects in subsurface microscopy of integrated circuits

F. Hakan Köklü^*, Bennett B. Goldberg, M. Selim Ünlü

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigate the defocus and image quality affected by a dielectric interface on high numerical aperture focusing of linearly polarized illumination in aplanatic mode. Theoretical and experimental demonstration is performed on subsurface backside microscopy of silicon integrated circuits, showing that the high longitudinal magnification provided by solid immersion lens microscopy allows the observation of significant astigmatism. It is shown that a 50 micron longitudinal displacement of the objective lens with respect to the sample is necessary to achieve maximum resolutions in two directions.

Original language	English (US)
Pages (from-to)	1675-1679
Number of pages	5
Journal	Optics Communications
Volume	285
Issue number	7
DOIs	https://doi.org/10.1016/j.optcom.2011.12.050
State	Published - Apr 1 2012

Keywords

Diffraction limit
Numerical aperture
Polarization
Solid immersion
Spatial resolution

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.1016/j.optcom.2011.12.050

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title = "Dielectric interface effects in subsurface microscopy of integrated circuits",

abstract = "We investigate the defocus and image quality affected by a dielectric interface on high numerical aperture focusing of linearly polarized illumination in aplanatic mode. Theoretical and experimental demonstration is performed on subsurface backside microscopy of silicon integrated circuits, showing that the high longitudinal magnification provided by solid immersion lens microscopy allows the observation of significant astigmatism. It is shown that a 50 micron longitudinal displacement of the objective lens with respect to the sample is necessary to achieve maximum resolutions in two directions.",

keywords = "Diffraction limit, Numerical aperture, Polarization, Solid immersion, Spatial resolution",

author = "{Hakan K{\"o}kl{\"u}}, F. and Goldberg, {Bennett B.} and {Selim {\"U}nl{\"u}}, M.",

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T1 - Dielectric interface effects in subsurface microscopy of integrated circuits

AU - Hakan Köklü, F.

AU - Goldberg, Bennett B.

AU - Selim Ünlü, M.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - We investigate the defocus and image quality affected by a dielectric interface on high numerical aperture focusing of linearly polarized illumination in aplanatic mode. Theoretical and experimental demonstration is performed on subsurface backside microscopy of silicon integrated circuits, showing that the high longitudinal magnification provided by solid immersion lens microscopy allows the observation of significant astigmatism. It is shown that a 50 micron longitudinal displacement of the objective lens with respect to the sample is necessary to achieve maximum resolutions in two directions.

AB - We investigate the defocus and image quality affected by a dielectric interface on high numerical aperture focusing of linearly polarized illumination in aplanatic mode. Theoretical and experimental demonstration is performed on subsurface backside microscopy of silicon integrated circuits, showing that the high longitudinal magnification provided by solid immersion lens microscopy allows the observation of significant astigmatism. It is shown that a 50 micron longitudinal displacement of the objective lens with respect to the sample is necessary to achieve maximum resolutions in two directions.

KW - Diffraction limit

KW - Numerical aperture

KW - Polarization

KW - Solid immersion

KW - Spatial resolution

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M3 - Article

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SP - 1675

EP - 1679

JO - Optics Communications

JF - Optics Communications

IS - 7

ER -

Dielectric interface effects in subsurface microscopy of integrated circuits

Abstract

Keywords

ASJC Scopus subject areas

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