TY - JOUR
T1 - Dielectric materials for electrolyte gated transistor applications
AU - Huang, Wei
AU - Chen, Jianhua
AU - Wang, Gang
AU - Yao, Yao
AU - Zhuang, Xinming
AU - Pankow, Robert M.
AU - Cheng, Yuhua
AU - Marks, Tobin J.
AU - Facchetti, Antonio
N1 - Funding Information:
The authors gratefully acknowledge the financial support by AFOSR grant FA9550-18-1-0320, Northwestern University MRSEC grant NSF DMR-1720139, U.S. Department of Commerce, National Institute of Standards and Technology as part of the Center for Hierarchical Materials Design (CHiMaD) award 70NANB19H005, the National Natural Science Foundation of China (No. U1830207) and Flexterra Corp.
Publisher Copyright:
© The Royal Society of Chemistry 2021.
PY - 2021/8/14
Y1 - 2021/8/14
N2 - In this review, we summarize the recent progress in developing dielectric materials for electrolyte gated transistors (EGTs). Semiconductors for EGTs have been extensively studied and reviewed since they dominate the key transport properties of these types of transistors. However, the electrolyte dielectric component of these devices is equally important since it provides ionic displacement dominating the device capacitance, driving voltage, and switching times, and determines how to integrate EGTs in/with other device components. Thus, the development of electrolyte dielectrics not only improves the EGT performance but also enables new features and opens up new possibilities for EGTs. Liquid electrolytes are more suitable for integration at the bio-interface and in sensing applications, while solid electrolytes can be printable and are compatible with circuit monolithic integration. Moreover, understanding the mechanism of electrolyte dielectric gating has also accelerated the expansion of emerging electrolyte-based electric double layer transistors (EDLTs) and electrochemical transistors (ECTs). In this review, we first discuss the structure and operation of EDLTs and ECTs, for the latter particularly those based on organic semiconductors (OECTs), since they are the major users of these materials. Next, different types of electrolyte dielectric materials are discussed, driven by relevant applications. We complete this paper with a summary and an outlook of this field.
AB - In this review, we summarize the recent progress in developing dielectric materials for electrolyte gated transistors (EGTs). Semiconductors for EGTs have been extensively studied and reviewed since they dominate the key transport properties of these types of transistors. However, the electrolyte dielectric component of these devices is equally important since it provides ionic displacement dominating the device capacitance, driving voltage, and switching times, and determines how to integrate EGTs in/with other device components. Thus, the development of electrolyte dielectrics not only improves the EGT performance but also enables new features and opens up new possibilities for EGTs. Liquid electrolytes are more suitable for integration at the bio-interface and in sensing applications, while solid electrolytes can be printable and are compatible with circuit monolithic integration. Moreover, understanding the mechanism of electrolyte dielectric gating has also accelerated the expansion of emerging electrolyte-based electric double layer transistors (EDLTs) and electrochemical transistors (ECTs). In this review, we first discuss the structure and operation of EDLTs and ECTs, for the latter particularly those based on organic semiconductors (OECTs), since they are the major users of these materials. Next, different types of electrolyte dielectric materials are discussed, driven by relevant applications. We complete this paper with a summary and an outlook of this field.
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U2 - 10.1039/d1tc02271g
DO - 10.1039/d1tc02271g
M3 - Review article
AN - SCOPUS:85112000246
SN - 2050-7526
VL - 9
SP - 9348
EP - 9376
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 30
ER -