Dielectric properties of epitaxial BaTiO3 thin films

B. H. Hoerman*, G. M. Ford, L. D. Kaufmann, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

128 Scopus citations


The dielectric response of epitaxial BaTiO3 thin films deposited on MgO was measured through surface electrodes as a function of applied bias, frequency, and temperature. The room temperature value of the dielectric constant was ∼500 with a dissipation factor, tan(δ), of 0.05 at 100 kHz. Measurements varying the bias field showed hysteresis of the dielectric response and a tunability of 30% for a maximum applied field of ∼7 MV/m. The frequency response of the dielectric constant is well described by a Curie-von Schweidler power law with an exponent ∼0.04 in the range 1 kHz-13 MHz. The films undergo a diffuse phase transition at temperatures higher than the bulk Curie temperature. The behavior of the dielectric response is attributed to the presence of residual strain in the epitaxial thin films.

Original languageEnglish (US)
Pages (from-to)2248-2250
Number of pages3
JournalApplied Physics Letters
Issue number16
StatePublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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