Differences between amorphous indium oxide thin films

D. Bruce Buchholz, Li Zeng, Michael J Bedzyk, R P H Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.

Original languageEnglish (US)
Pages (from-to)475-480
Number of pages6
JournalProgress in Natural Science: Materials International
Volume23
Issue number5
DOIs
StatePublished - Oct 1 2013

Funding

For this research DBB and RPHC are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under the Award Number DE-FG02-06ER46320: L.Z and M.J.B are supported by the MRSEC program of the National Science Foundation at Northwestern University under grant no. DMR-1121262. This work made use of; the J.B.Cohen x-ray Diffraction Facility supported by the MRSEC program of the National Science Foundation (DMR-1121262) at the Materials Research Center of Northwestern University; the Keck-II facilities of NUANCE supported by NSF-NSEC, NSF-MRSEC, Keck Foundation and the State of Illinois; the Optical Microscopy and Metallography Facility MRSEC program of the National Science Foundation.

Keywords

  • Amorphous
  • Deposition temperature
  • Oxide
  • Semiconductor
  • Transparent conducting oxide

ASJC Scopus subject areas

  • General Materials Science

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