@article{80afb6abb41b4ae4ad86956904d2941c,
title = "Differences between amorphous indium oxide thin films",
abstract = "A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.",
keywords = "Amorphous, Deposition temperature, Oxide, Semiconductor, Transparent conducting oxide",
author = "Buchholz, {D. Bruce} and Li Zeng and Bedzyk, {Michael J} and Chang, {R P H}",
note = "Funding Information: For this research DBB and RPHC are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under the Award Number DE-FG02-06ER46320: L.Z and M.J.B are supported by the MRSEC program of the National Science Foundation at Northwestern University under grant no. DMR-1121262 . This work made use of; the J.B.Cohen x-ray Diffraction Facility supported by the MRSEC program of the National Science Foundation ( DMR-1121262 ) at the Materials Research Center of Northwestern University ; the Keck-II facilities of NUANCE supported by NSF-NSEC, NSF-MRSEC, Keck Foundation and the State of Illinois ; the Optical Microscopy and Metallography Facility MRSEC program of the National Science Foundation . Publisher Copyright: {\textcopyright} 2013 Chinese Materials Research Society",
year = "2013",
month = oct,
day = "1",
doi = "10.1016/j.pnsc.2013.08.004",
language = "English (US)",
volume = "23",
pages = "475--480",
journal = "Progress in Natural Science: Materials International",
issn = "1002-0071",
publisher = "Chinese Materials Research Society",
number = "5",
}