Differences between amorphous indium oxide thin films

D. Bruce Buchholz, Li Zeng, Michael J Bedzyk, R P H Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.

Original languageEnglish (US)
Pages (from-to)475-480
Number of pages6
JournalProgress in Natural Science: Materials International
Issue number5
StatePublished - Oct 1 2013


  • Amorphous
  • Deposition temperature
  • Oxide
  • Semiconductor
  • Transparent conducting oxide

ASJC Scopus subject areas

  • General Materials Science


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