Differences between amorphous indium oxide thin films

D. Bruce Buchholz; Li Zeng; Michael J Bedzyk; R P H Chang

doi:10.1016/j.pnsc.2013.08.004

Differences between amorphous indium oxide thin films

D. Bruce Buchholz, Li Zeng, Michael J Bedzyk, R P H Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm³ at +50 °C to 5.3 g/cm³ at −100 °C.

Original language	English (US)
Pages (from-to)	475-480
Number of pages	6
Journal	Progress in Natural Science: Materials International
Volume	23
Issue number	5
DOIs	https://doi.org/10.1016/j.pnsc.2013.08.004 https://doi.org/10.1016/j.pnsc.2013.08.004
State	Published - Oct 1 2013

Funding

For this research DBB and RPHC are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under the Award Number DE-FG02-06ER46320: L.Z and M.J.B are supported by the MRSEC program of the National Science Foundation at Northwestern University under grant no. DMR-1121262. This work made use of; the J.B.Cohen x-ray Diffraction Facility supported by the MRSEC program of the National Science Foundation (DMR-1121262) at the Materials Research Center of Northwestern University; the Keck-II facilities of NUANCE supported by NSF-NSEC, NSF-MRSEC, Keck Foundation and the State of Illinois; the Optical Microscopy and Metallography Facility MRSEC program of the National Science Foundation.

Keywords

Amorphous
Deposition temperature
Oxide
Semiconductor
Transparent conducting oxide

ASJC Scopus subject areas

General Materials Science

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title = "Differences between amorphous indium oxide thin films",

abstract = "A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.",

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author = "Buchholz, {D. Bruce} and Li Zeng and Bedzyk, {Michael J} and Chang, {R P H}",

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AU - Buchholz, D. Bruce

AU - Zeng, Li

AU - Bedzyk, Michael J

AU - Chang, R P H

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N2 - A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.

AB - A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.

KW - Amorphous

KW - Deposition temperature

KW - Oxide

KW - Semiconductor

KW - Transparent conducting oxide

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Differences between amorphous indium oxide thin films

Abstract

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Keywords

ASJC Scopus subject areas

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