Diffuse phase transition in epitaxial BaTiO3 thin films

Soma Chattopadhyay; A. R. Teren; Jin Ha Hwang; T. O. Mason; B. W. Wessels

doi:10.1557/JMR.2002.0095

Diffuse phase transition in epitaxial BaTiO₃ thin films

Soma Chattopadhyay, A. R. Teren, Jin Ha Hwang, T. O. Mason, B. W. Wessels

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The thickness dependence of the dielectric properties of epitaxial BaTiO₃ thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO₃ was attributed to the presence of strain in the films.

Original language	English (US)
Pages (from-to)	669-674
Number of pages	6
Journal	Journal of Materials Research
Volume	17
Issue number	3
DOIs	https://doi.org/10.1557/JMR.2002.0095
State	Published - Mar 2002

Funding

The authors would like to thank B.H. Hoerman and Dr. Alokmay Datta of Northwestern University and Dr. K. Ghosh of Argonne National Laboratory for fruitful discussions. S.C. acknowledges the cooperation of Dr. Clinton B. Lee. The authors acknowledge support of the U.S. Department of Energy under Grant No. DE FG02-85ER45209 and the NSF MRSEC program under Grant No. DMR-962472.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/JMR.2002.0095

Cite this

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title = "Diffuse phase transition in epitaxial BaTiO3 thin films",

abstract = "The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.",

author = "Soma Chattopadhyay and Teren, {A. R.} and Hwang, {Jin Ha} and Mason, {T. O.} and Wessels, {B. W.}",

note = "Funding Information: The authors would like to thank B.H. Hoerman and Dr. Alokmay Datta of Northwestern University and Dr. K. Ghosh of Argonne National Laboratory for fruitful discussions. S.C. acknowledges the cooperation of Dr. Clinton B. Lee. The authors acknowledge support of the U.S. Department of Energy under Grant No. DE FG02-85ER45209 and the NSF MRSEC program under Grant No. DMR-962472.",

year = "2002",

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AU - Chattopadhyay, Soma

AU - Teren, A. R.

AU - Hwang, Jin Ha

AU - Mason, T. O.

AU - Wessels, B. W.

N1 - Funding Information: The authors would like to thank B.H. Hoerman and Dr. Alokmay Datta of Northwestern University and Dr. K. Ghosh of Argonne National Laboratory for fruitful discussions. S.C. acknowledges the cooperation of Dr. Clinton B. Lee. The authors acknowledge support of the U.S. Department of Energy under Grant No. DE FG02-85ER45209 and the NSF MRSEC program under Grant No. DMR-962472.

PY - 2002/3

Y1 - 2002/3

N2 - The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

AB - The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

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