Diffuse phase transition in epitaxial BaTiO3 thin films

Soma Chattopadhyay, A. R. Teren, Jin Ha Hwang, T. O. Mason, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

Original languageEnglish (US)
Pages (from-to)669-674
Number of pages6
JournalJournal of Materials Research
Issue number3
StatePublished - Mar 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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