Abstract
We address the issue of decreasing band-gap with increasing atomic number, inherent in semiconducting materials, by introducing a concept we call dimensional reduction. The concept leads to semiconductor compounds containing high atomic number elements and simultaneously exhibiting a large band gap and high mass density suggesting that dimensional reduction can be successfully employed in developing new γ-ray detecting materials. As an example we discuss the compound Cs 2Hg 6S 7 that exhibits a band-gap of 1.65eV and mobility-lifetime products comparable to those of optimized Cd 0.9Zn 0.1Te.
Original language | English (US) |
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Title of host publication | Nuclear Radiation Detection Materials - 2011 |
Pages | 87-92 |
Number of pages | 6 |
DOIs | |
State | Published - 2012 |
Event | 2011 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 25 2011 → Apr 29 2011 |
Publication series
Name | Materials Research Society Symposium Proceedings |
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Volume | 1341 |
ISSN (Print) | 0272-9172 |
Other
Other | 2011 MRS Spring Meeting |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 4/25/11 → 4/29/11 |
Funding
This research was supported by the Defense Threat Reduction Agency through grant HDTRA1 09-1-0044.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering