Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM

Richard Dorrance; Juan G. Alzate; Sergiy S. Cherepov; Pramey Upadhyaya; Ilya N. Krivorotov; Jordan A. Katine; Juergen Langer; Kang L. Wang; Pedram Khalili Amiri; Dejan Marković

doi:10.1109/LED.2013.2255096

Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM

Richard Dorrance, Juan G. Alzate, Sergiy S. Cherepov, Pramey Upadhyaya, Ilya N. Krivorotov, Jordan A. Katine, Juergen Langer, Kang L. Wang, Pedram Khalili Amiri, Dejan Marković

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages ∼ 1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F² effective cell size.

Original language	English (US)
Article number	6513288
Pages (from-to)	753-755
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/LED.2013.2255096
State	Published - 2013

Keywords

Diode-MTJ crossbar
magnetic tunnel junction (MTJ)
magnetoelectric random access memory (MeRAM)
magnetoresistive random access memory (MRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2255096

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title = "Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM",

abstract = "This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages ∼ 1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F2 effective cell size.",

keywords = "Diode-MTJ crossbar, magnetic tunnel junction (MTJ), magnetoelectric random access memory (MeRAM), magnetoresistive random access memory (MRAM)",

author = "Richard Dorrance and Alzate, {Juan G.} and Cherepov, {Sergiy S.} and Pramey Upadhyaya and Krivorotov, {Ilya N.} and Katine, {Jordan A.} and Juergen Langer and Wang, {Kang L.} and Amiri, {Pedram Khalili} and Dejan Markovi{\'c}",

year = "2013",

doi = "10.1109/LED.2013.2255096",

language = "English (US)",

volume = "34",

pages = "753--755",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM

AU - Dorrance, Richard

AU - Alzate, Juan G.

AU - Cherepov, Sergiy S.

AU - Upadhyaya, Pramey

AU - Krivorotov, Ilya N.

AU - Katine, Jordan A.

AU - Langer, Juergen

AU - Wang, Kang L.

AU - Amiri, Pedram Khalili

AU - Marković, Dejan

PY - 2013

Y1 - 2013

N2 - This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages ∼ 1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F2 effective cell size.

AB - This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages ∼ 1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F2 effective cell size.

KW - Diode-MTJ crossbar

KW - magnetic tunnel junction (MTJ)

KW - magnetoelectric random access memory (MeRAM)

KW - magnetoresistive random access memory (MRAM)

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DO - 10.1109/LED.2013.2255096

M3 - Article

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VL - 34

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EP - 755

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 6513288

ER -

Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM

Abstract

Keywords

ASJC Scopus subject areas

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