Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM

Richard Dorrance, Juan G. Alzate, Sergiy S. Cherepov, Pramey Upadhyaya, Ilya N. Krivorotov, Jordan A. Katine, Juergen Langer, Kang L. Wang, Pedram Khalili Amiri, Dejan Marković

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages ∼ 1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F2 effective cell size.

Original languageEnglish (US)
Article number6513288
Pages (from-to)753-755
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number6
DOIs
StatePublished - May 10 2013

Keywords

  • Diode-MTJ crossbar
  • magnetic tunnel junction (MTJ)
  • magnetoelectric random access memory (MeRAM)
  • magnetoresistive random access memory (MRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Dorrance, R., Alzate, J. G., Cherepov, S. S., Upadhyaya, P., Krivorotov, I. N., Katine, J. A., Langer, J., Wang, K. L., Amiri, P. K., & Marković, D. (2013). Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM. IEEE Electron Device Letters, 34(6), 753-755. [6513288]. https://doi.org/10.1109/LED.2013.2255096