Direct atomic imaging of antiphase boundaries and orthotwins in orientation-patterned GaAs

Roberto dos Reis*, C. Ophus, J. Jimenez, M. Snure, B. Gérard, Z. Liliental-Weber

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We use transmission electron microscopy to study orientation-patterned GaAs layers very attractive for applications in terahertz and infrared frequency conversion devices. We observe regularly distributed inversion domains separated by inversion boundaries, together with undesirable microtwin defects originating at these boundaries. Atomic resolution aberration-corrected scanning transmission electron microscopy allowed us to resolve the GaAs dumbbells leading to a direct determination of the growth polarity of particular domains and determination of the alternating Ga-Ga and As-As bonds at the {110}-type antiphase boundary planes. We also determined observed microtwins as rotation twins called orthotwins, the defect that can cause optical losses.

Original languageEnglish (US)
Article number081905
JournalApplied Physics Letters
Volume102
Issue number8
DOIs
StatePublished - Feb 25 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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