Direct correlation of transport properties and microstructure in Y1Ba2Cu3O7-x thin film grain boundaries

B. V. Vuchic*, K. L. Merkle, D. B. Buchholz, R. P H Chang, L. D. Marks

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Individual 45° [001] tilt grain boundaries in Y1Ba2Cu3O7-x thin films grown on biepitaxial substrates were studied. The thin films were grown using both pulsed organometallic beam epitaxy (POMBE) and laser ablution. Transport characteristics of the individual grain boundaries were measured including resistance - temperature (R-T) and current - voltage (I-V) dependencies with and without an applied magnetic field. In order to elucidate possible structural origins of the differences in transport behavior, the same grain boundaries which were electrically characterized were subsequently thinned for electron-microscopy analysis. Transmission-electron-microscopy and high-resolution-electron-microscopy were used to structurally characterize the grain boundaries. The macroscopic and microscopic structures of two boundaries, a nominally resistive and a superconducting grain boundary, are compared.

Original languageEnglish (US)
Pages (from-to)419-424
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume357
StatePublished - Jan 1 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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