Abstract
Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1 μm gate-length depletion-mode n -channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2 - 10-5 A cm2, a maximum drain current of 260 mAmm at 2 V forward gate bias, and a maximum intrinsic transconductance of 127 mSmm. These devices achieve a current cutoff frequency (fT) of 10.6 GHz and a maximum oscillation frequency (fmax) of 6.9 GHz. Nearly hysteresis-free Ids - Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.
Original language | English (US) |
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Article number | 092103 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 9 |
DOIs | |
State | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)