Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1 μm gate-length depletion-mode n -channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2 - 10-5 A cm2, a maximum drain current of 260 mAmm at 2 V forward gate bias, and a maximum intrinsic transconductance of 127 mSmm. These devices achieve a current cutoff frequency (fT) of 10.6 GHz and a maximum oscillation frequency (fmax) of 6.9 GHz. Nearly hysteresis-free Ids - Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.