Direct detection of hole gas in Ge-Si core-shell nanowires by enhanced Raman scattering

Shixiong Zhang, Francisco J. Lopez, Jerome K. Hyun, Lincoln J. Lauhon

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F2g mode in Raman spectra. Raman enhancements of 10-10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.

Original languageEnglish (US)
Pages (from-to)4483-4487
Number of pages5
JournalNano letters
Volume10
Issue number11
DOIs
StatePublished - Nov 10 2010

Keywords

  • Fano resonance
  • Nanowire
  • Raman scattering
  • heterostructure

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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