Direct Eoenergy gaps of bismuth-containing III—V alloys predicted using quantum dielectric theory

S. A. Barnett*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Quantum dielectric theory has been used to predict the direct Eo energy gaps of ternary and quaternary III-V semiconductor alloys containing up to ~10 mol % InBi. The calculated composition dependence of Eo for InSb1 - x Bix is in good agreement with experimental results with a predicted semiconductor-semimetal transition (77 K) at x = 0.124. E0 (77 K) values corresponding to infrared wavelengths of 8 to 12 pm are obtained at x = 0.043-0.070, respectively, corresponding to lattice mismatches with InSh substrates in the range from 0.11 % to 0.17%. The quaternary alloys InAs1 … x … y Sbx Biy and In1 - x Gax Sb1 - y Biy also yield Eu values in this range with similar Inm contents while maintaining exact lattice match to InSb substrates. InAs1 - x Bix is proposed as a new alloy for spanning the wavelength range from 3 to 5 pm. The required x values range from 0 to 0.079 (measuring Eo at 77 K) and the maximum lattice mismatch with either InAs or GaSb substrates for these compositions is < 0.31 %. The related quaternary alloy In1 … x Gax As1 … y Biy also spans the 3-5 pm wavelength range while maintaining lattice match with InAs or GaSb substrates.

Original languageEnglish (US)
Pages (from-to)2845-2848
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume5
Issue number5
DOIs
StatePublished - Sep 1987

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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