Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

Jinhee Ham; Wooyoung Shim; Do Hyun Kim; Seunghyun Lee; Jongwook Roh; Sung Woo Sohn; Kyu Hwan Oh; Peter W. Voorhees; Wooyoung Lee

doi:10.1109/INEC.2010.5424556

Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Peter W. Voorhees, Wooyoung Lee^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a novel stress-induced method to grow single crystalline Bi ₂Te₃ nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi ₂Te₃ nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

Original language	English (US)
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	105-106
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424556
State	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	1/3/10 → 1/8/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424556

Cite this

Ham, J., Shim, W., Kim, D. H., Lee, S., Roh, J., Sohn, S. W., Oh, K. H., Voorhees, P. W., & Lee, W. (2010). Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 105-106). Article 5424556 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424556

@inproceedings{b2a776aac84b47dda3fd5989004dda4b,

title = "Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices",

abstract = "We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.",

author = "Jinhee Ham and Wooyoung Shim and Kim, {Do Hyun} and Seunghyun Lee and Jongwook Roh and Sohn, {Sung Woo} and Oh, {Kyu Hwan} and Voorhees, {Peter W.} and Wooyoung Lee",

year = "2010",

doi = "10.1109/INEC.2010.5424556",

language = "English (US)",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "105--106",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Ham, J, Shim, W, Kim, DH, Lee, S, Roh, J, Sohn, SW, Oh, KH, Voorhees, PW & Lee, W 2010, Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424556, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 105-106, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 1/3/10. https://doi.org/10.1109/INEC.2010.5424556

Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. / Ham, Jinhee; Shim, Wooyoung; Kim, Do Hyun et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 105-106 5424556 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

AU - Ham, Jinhee

AU - Shim, Wooyoung

AU - Kim, Do Hyun

AU - Lee, Seunghyun

AU - Roh, Jongwook

AU - Sohn, Sung Woo

AU - Oh, Kyu Hwan

AU - Voorhees, Peter W.

AU - Lee, Wooyoung

PY - 2010

Y1 - 2010

N2 - We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

AB - We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

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UR - http://www.scopus.com/inward/citedby.url?scp=77951659201&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424556

DO - 10.1109/INEC.2010.5424556

M3 - Conference contribution

AN - SCOPUS:77951659201

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 105

EP - 106

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Ham J, Shim W, Kim DH, Lee S, Roh J, Sohn SW et al. Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 105-106. 5424556. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). doi: 10.1109/INEC.2010.5424556

Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

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