Direct growth of compound semiconductor nanowires by on-film formation of nanowires: Bismuth telluride

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Peter W. Voorhees, Wooyoung Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Scopus citations


Bismuth telluride (Bi2Te3) nanowires are of great interest as nanoscale building blocks for high-efficiency thermoelectric devices. Their lowdimensional character leads to an enhanced figure-of-merit (ZT), an indicator of thermoelectric efficiency. Herein, we report the invention of a direct growth method termed On-Film Formation of Nanowires (OFF-ON) for making high-quality single-crystal compound semiconductor nanowires, that is, Bi2Te3, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal compound semiconductor Bi2Te3 nanowires from sputtered BiTe films after thermal annealing at 350 °C. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film. OFF-ON is a simple but powerful method for growing perfect single-crystal compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date.

Original languageEnglish (US)
Pages (from-to)2867-2872
Number of pages6
JournalNano letters
Issue number8
StatePublished - Aug 12 2009

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • General Materials Science


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