@article{801bec5e462243e79802f2f1995ff859,
title = "Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics",
abstract = "Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.",
keywords = "1/f noise, Kelvin probe force microscopy, MoS, graphene, lateral (in-plane) heterostructures",
author = "Amirhossein Behranginia and Poya Yasaei and Majee, {Arnab K.} and Sangwan, {Vinod K.} and Fei Long and Foss, {Cameron J.} and Tara Foroozan and Shadi Fuladi and Hantehzadeh, {Mohammad Reza} and Reza Shahbazian-Yassar and Hersam, {Mark C.} and Zlatan Aksamija and Amin Salehi-Khojin",
note = "Funding Information: A.S.K. and Z.A. work were supported by National Science Foundation 2-DARE program (Grant # NSF EFMA-1542864). V.K.S. and M.C.H. acknowledge support from the 2-DARE program (NSF EFRI-1433510). A.S.K. acknowledges the MRSEC Materials Preparation and Measurement Laboratory shared user facility at the University of Chicago (Grant# NSF DMR-1420709). R.S.Y. and F.L. acknowledge the funding from National Science Foundation (Grant # NSF CMMI-1619743). A.S.K. and A.B. conceived the idea. A.S.K. led the material synthesis, device fabrications, electrical measurements, and device characterizations. A.B. synthesized the MoS2–graphene lateral heterostructure and performed electrical experiments. A.B. and P.Y. carried out device fabrications and characterizations. P.Y. and T.F. synthesized the CVD graphene. A.K.M. performed band structure alignment, mobility, and interfacial resistance calculations. V.K.S. performed 1/f noise and breakdown measurements and analysis. C.J.F. carried out DFT and transmission coefficient calculations. Z.A. conceived and supervised the calculations. M.C.H. supervised the 1/f noise and breakdown measurements and analysis. F.L. performed KPFM measurements and R.S.Y. supervised him. S.F. helped in DFT calculations. M.R.H. helped in CVD MoS2 and graphene synthesis. The lead authors acknowledge the assistance of Dr. Daniel P. Bailey in copy-editing this manuscript. Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2017",
month = aug,
day = "11",
doi = "10.1002/smll.201604301",
language = "English (US)",
volume = "13",
journal = "Small",
issn = "1613-6810",
publisher = "Wiley-VCH Verlag",
number = "30",
}