Direct Growth of High Mobility and Low-Noise Lateral MoS2–Graphene Heterostructure Electronics

Amirhossein Behranginia, Poya Yasaei, Arnab K. Majee, Vinod K. Sangwan, Fei Long, Cameron J. Foss, Tara Foroozan, Shadi Fuladi, Mohammad Reza Hantehzadeh, Reza Shahbazian-Yassar, Mark C. Hersam, Zlatan Aksamija*, Amin Salehi-Khojin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2–graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2–graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2–metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2–graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.

Original languageEnglish (US)
Article number1604301
Issue number30
StatePublished - Aug 11 2017


  • 1/f noise
  • Kelvin probe force microscopy
  • MoS
  • graphene
  • lateral (in-plane) heterostructures

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)


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