Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

İlkay Demir*, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


AlN layers have been grown on 200 nm period of nanopatterned Si (111) substrates by cantilever epitaxy and compared with AlN layers grown by maskless lateral epitaxial overgrowth (LEO) on micropatterned Si (111) substrates. The material quality of 5–10 µm thick AlN grown by LEO is comparable to that of much thinner layers (2 µm) grown by cantilever epitaxy on the nanopatterned substrates. Indeed, the latter exhibited root mean square (RMS) roughness of 0.65 nm and X-ray diffraction full width at half-maximum (FWHM) of 710 arcsec along the (0002) reflection and 930 arcsec along the (10–15) reflection. The corresponding room temperature photoluminescence spectra was dominated by a sharp band edge peak. Back emission ultra violet light emitting diodes (UV LEDs) were fabricated by flip chip bonding to patterned AlN heat sinks followed by complete Si (111) substrate removal demonstrating a peak pulsed power of ∼0.7 mW at 344 nm peak emission wavelength. The demonstrated UV LEDs were fabricated on a cost effective epitaxial structure grown on the nanopatterned Si substrate with a total thickness of 3.3 µm.

Original languageEnglish (US)
Article number1600363
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number4
StatePublished - Apr 1 2017


  • AlN
  • cantilever epitaxy
  • light emitting diodes
  • nanopatterning
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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