Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Keyphrases

• Nanopatterning 100%
• Cantilever 100%
• Direct Growth 100%
• Si Substrate 100%
• Epitaxy 100%
• Si(111) Substrate 100%
• AlN Layer 100%
• Lateralized Overgrowth 66%
• Ultraviolet Light-emitting Diode (UV-LED) 66%
• X Ray Diffraction 33%
• Micropatterning 33%
• Nanostructured Substrates 33%
• Full Width at Half Maximum 33%
• Emission Spectrum 33%
• Material Quality 33%
• Band Edge 33%
• Photoluminescence Spectra 33%
• Root-mean-square Roughness 33%
• Heat Sink 33%
• Pulsed Power 33%
• Substrate Removal 33%
• Mask-free 33%
• Peak Emissions 33%
• Room-temperature Photoluminescence 33%
• Flip-chip Bonding 33%
• Epitaxial Structure 33%

Engineering

• Light-Emitting Diode 100%
• Si Substrate 100%
• Ultraviolet Light 100%
• Root Mean Square 50%
• Square Roughness 50%
• Ray Diffraction 50%
• Thin Layer 50%
• Material Quality 50%
• Band Edge 50%
• Chip Bonding 50%
• Room Temperature 50%
• Emission Wavelength 50%

Material Science

• Aluminum Nitride 100%
• Epitaxy 100%
• Light-Emitting Diode 40%
• Photoluminescence 20%
• X-Ray Diffraction 20%