Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy

D. Ban; E. H. Sargent; St J. Dixon-Warren; I. Calder; A. J. SpringThorpe; R. Dworschak; G. Este; J. K. White

doi:10.1063/1.1528277

Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy

D. Ban, E. H. Sargent, St J. Dixon-Warren^*, I. Calder, A. J. SpringThorpe, R. Dworschak, G. Este, J. K. White

^*Corresponding author for this work

Chemistry

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30 Scopus citations

Abstract

Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy (SVM) was presented. The SVM results were compared with the scanning spreading resistance microscopy (SSRM) measurements under zero bias on the same sample. Results showed that the measured voltage was determined by the changes in the electrostatic potential and the carrier concentration at the SVM tip with and without the applied bias.

Original language	English (US)
Pages (from-to)	5057-5059
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	26
DOIs	https://doi.org/10.1063/1.1528277
State	Published - Dec 23 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1528277

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title = "Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy",

abstract = "Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy (SVM) was presented. The SVM results were compared with the scanning spreading resistance microscopy (SSRM) measurements under zero bias on the same sample. Results showed that the measured voltage was determined by the changes in the electrostatic potential and the carrier concentration at the SVM tip with and without the applied bias.",

author = "D. Ban and Sargent, {E. H.} and Dixon-Warren, {St J.} and I. Calder and SpringThorpe, {A. J.} and R. Dworschak and G. Este and White, {J. K.}",

year = "2002",

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language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy

AU - Ban, D.

AU - Sargent, E. H.

AU - Dixon-Warren, St J.

AU - Calder, I.

AU - SpringThorpe, A. J.

AU - Dworschak, R.

AU - Este, G.

AU - White, J. K.

PY - 2002/12/23

Y1 - 2002/12/23

N2 - Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy (SVM) was presented. The SVM results were compared with the scanning spreading resistance microscopy (SSRM) measurements under zero bias on the same sample. Results showed that the measured voltage was determined by the changes in the electrostatic potential and the carrier concentration at the SVM tip with and without the applied bias.

AB - Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy (SVM) was presented. The SVM results were compared with the scanning spreading resistance microscopy (SSRM) measurements under zero bias on the same sample. Results showed that the measured voltage was determined by the changes in the electrostatic potential and the carrier concentration at the SVM tip with and without the applied bias.

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U2 - 10.1063/1.1528277

DO - 10.1063/1.1528277

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy

Abstract

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