Direct measurement of inhomogeneous longitudinal dopant distribution in SiNVVs using nano-probe scanning auger microscopy

U. Givan*, J. K. Hyun, E. Koren, J. S. Hammond, D. F. Paul, L. J. Lauhon, Y. Rosenwaks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Controlled incorporation of dopants into semiconductors nanowires is a critical step in tailoring their physical properties and hence for their utilization in future nano electronic devices. Recently, several studies addressing this issue revealed that dopant are inhomogeneously distributed in NWs grown by the popular CVD-VLS growth technique. The majority of those studies employed indirect characterization techniques which are sensitive to the active dopants only. In order to deepen our understanding of the incorporation mechanism a direct observation of the dopant chemical concentrations is required. In addition, the comparison between direct and indirect observations can shed some light on the dopant activation mechanisms in VLS grown NWs. In this study nanoprobe scanning Auger microscopy was employed to extract the longitudinal dopant distribution along P doped SiNWs. The effect of growth conditions and post-growth annealing on this distribution was studied and compared to previous studies which used indirect measurement techniques. In addition, dopant modulated segmented NWs were studied in order to distinguish the contribution of different mechanisms to the incorporation of dopants into VLS grown NWs.

Original languageEnglish (US)
Title of host publicationQuantitative Characterization of Nanostructured Materials
Pages38-43
Number of pages6
DOIs
StatePublished - Dec 1 2011
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1349
ISSN (Print)0272-9172

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/25/114/29/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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