Abstract
We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 1017cm-3.
Original language | English (US) |
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Article number | 223511 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 22 |
DOIs | |
State | Published - Nov 28 2011 |
Funding
This research was generously supported by Grant No. 2008140 from the United States-Israel Binational Science Foundation [BSF] and the National Science Foundation Grant DMR-1006069.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)