We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential. Highly doped n-type nanowires show smaller depletion regions compared to UID nanowires, and their potential profile was successfully modeled. For the UID nanowires, the measured potential profiles and, consequently, the depletion region indicate the presence of bulk deep traps with a concentration of ∼5 1017cm-3.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Nov 28 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)