Direct measurement of strain in a Ge island on Si(001)

Peter D. Miller*, Chuan Pu Liu, William L. Henstrom, J. Murray Gibson, Y. Huang, P. Zhang, T. I. Kamins, D. P. Basile, R. Stanley Williams

*Corresponding author for this work

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Abstract

We report on a direct measurement of the strain in a single Ge "quantum dot" island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed.

Original languageEnglish (US)
Pages (from-to)46-48
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number1
DOIs
StatePublished - Jul 5 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Miller, P. D., Liu, C. P., Henstrom, W. L., Gibson, J. M., Huang, Y., Zhang, P., Kamins, T. I., Basile, D. P., & Williams, R. S. (1999). Direct measurement of strain in a Ge island on Si(001). Applied Physics Letters, 75(1), 46-48. https://doi.org/10.1063/1.124272