Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells

Lukasz Brzozowski; Edward H. Sargent; Anthony Spring Thorpe; Marcius Extavour

doi:10.1063/1.1585130

Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells

Lukasz Brzozowski^*, Edward H. Sargent, Anthony Spring Thorpe, Marcius Extavour

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The saturation of absorption and negative nonlinear index changes in the In_0.530Al_0.141Ga_0.329As/In_0.530 Ga_0.470As multiquantum-wells (MQW) were directly measured with picosecond pulses. Associated loss-related nonlinear figures of merit were calculated. The fluences required to effect the nonlinear index changes measured were similar to those inside a semiconductor laser.

Original language	English (US)
Pages (from-to)	4429-4431
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	25
DOIs	https://doi.org/10.1063/1.1585130
State	Published - Jun 23 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1585130

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title = "Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells",

abstract = "The saturation of absorption and negative nonlinear index changes in the In0.530Al0.141Ga0.329As/In0.530 Ga0.470As multiquantum-wells (MQW) were directly measured with picosecond pulses. Associated loss-related nonlinear figures of merit were calculated. The fluences required to effect the nonlinear index changes measured were similar to those inside a semiconductor laser.",

author = "Lukasz Brzozowski and Sargent, {Edward H.} and Thorpe, {Anthony Spring} and Marcius Extavour",

year = "2003",

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AU - Brzozowski, Lukasz

AU - Sargent, Edward H.

AU - Thorpe, Anthony Spring

AU - Extavour, Marcius

PY - 2003/6/23

Y1 - 2003/6/23

N2 - The saturation of absorption and negative nonlinear index changes in the In0.530Al0.141Ga0.329As/In0.530 Ga0.470As multiquantum-wells (MQW) were directly measured with picosecond pulses. Associated loss-related nonlinear figures of merit were calculated. The fluences required to effect the nonlinear index changes measured were similar to those inside a semiconductor laser.

AB - The saturation of absorption and negative nonlinear index changes in the In0.530Al0.141Ga0.329As/In0.530 Ga0.470As multiquantum-wells (MQW) were directly measured with picosecond pulses. Associated loss-related nonlinear figures of merit were calculated. The fluences required to effect the nonlinear index changes measured were similar to those inside a semiconductor laser.

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Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells

Abstract

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