Direct measurements of lateral variations of Schottky barrier height across "end-On" metal contacts to vertical Si nanowires by ballistic electron emission microscopy

Wei Cai; Yulu Che; Jonathan P. Pelz; Eric R. Hemesath; Lincoln J. Lauhon

doi:10.1021/nl203568c

Direct measurements of lateral variations of Schottky barrier height across "end-On" metal contacts to vertical Si nanowires by ballistic electron emission microscopy

Wei Cai, Yulu Che, Jonathan P. Pelz^*, Eric R. Hemesath, Lincoln J. Lauhon

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Ballistic electron emission microscopy measurements on individual "end-on" Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO ₂ interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.

Original language	English (US)
Pages (from-to)	694-698
Number of pages	5
Journal	Nano letters
Volume	12
Issue number	2
DOIs	https://doi.org/10.1021/nl203568c
State	Published - Feb 8 2012

Keywords

"end-on" contact
Schottky barrier
Si nanowire
interface states
nm resolution measurement

ASJC Scopus subject areas

Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Chemistry
General Materials Science

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10.1021/nl203568c

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title = "Direct measurements of lateral variations of Schottky barrier height across {"}end-On{"} metal contacts to vertical Si nanowires by ballistic electron emission microscopy",

abstract = "Ballistic electron emission microscopy measurements on individual {"}end-on{"} Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO 2 interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.",

keywords = "{"}end-on{"} contact, Schottky barrier, Si nanowire, interface states, nm resolution measurement",

author = "Wei Cai and Yulu Che and Pelz, {Jonathan P.} and Hemesath, {Eric R.} and Lauhon, {Lincoln J.}",

year = "2012",

month = feb,

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doi = "10.1021/nl203568c",

language = "English (US)",

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journal = "Nano letters",

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T1 - Direct measurements of lateral variations of Schottky barrier height across "end-On" metal contacts to vertical Si nanowires by ballistic electron emission microscopy

AU - Cai, Wei

AU - Che, Yulu

AU - Pelz, Jonathan P.

AU - Hemesath, Eric R.

AU - Lauhon, Lincoln J.

PY - 2012/2/8

Y1 - 2012/2/8

N2 - Ballistic electron emission microscopy measurements on individual "end-on" Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO 2 interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.

AB - Ballistic electron emission microscopy measurements on individual "end-on" Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO 2 interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.

KW - "end-on" contact

KW - Schottky barrier

KW - Si nanowire

KW - interface states

KW - nm resolution measurement

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DO - 10.1021/nl203568c

M3 - Article

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AN - SCOPUS:84856951887

SN - 1530-6984

VL - 12

SP - 694

EP - 698

JO - Nano letters

JF - Nano letters

IS - 2

ER -

Direct measurements of lateral variations of Schottky barrier height across "end-On" metal contacts to vertical Si nanowires by ballistic electron emission microscopy

Abstract

Keywords

ASJC Scopus subject areas

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