Direct observation of the proximity effect in the N layer in a multi-terminal SINIS Josephson junction

I. P. Nevirkovets; O. Chernyashevskyy; J. B. Ketterson

doi:10.1063/1.2355035

Direct observation of the proximity effect in the N layer in a multi-terminal SINIS Josephson junction

I. P. Nevirkovets^*, O. Chernyashevskyy, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is found that the lateral conductivity of a thin N layer inside a multi-terminal SINIS device (at temperatures down to 1.8 K) is dissipative with a small coherent contribution near zero voltage, which can be suppressed with a small parallel magnetic field; here S, I, and N denote a superconductor (Nb), an insulator (A10_×), and a normal metal (A1) respectively. It is suggested that this contribution is due to the proximity effect through the tunnel barriers, involving the superconducting fluctuations in A1. At the same time, a high Josephson current can flow normal to the structure, which we propose is due to a direct Josephson coupling between the external S electrodes.

Original language	English (US)
Title of host publication	LOW TEMPERATURE PHYSICS
Subtitle of host publication	24th International Conference on Low Temperature Physics - LT24
Pages	983-984
Number of pages	2
Volume	850
DOIs	https://doi.org/10.1063/1.2355035
State	Published - Dec 1 2006
Event	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States Duration: Aug 10 2006 → Oct 17 2006

Other

Other	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
Country	United States
City	Orlando, FL
Period	8/10/06 → 10/17/06

Keywords

Fluctuative superconductivity
Josephson effect
Multilayer
Proximity effect
Superconductivity
Tunneling

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2355035

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title = "Direct observation of the proximity effect in the N layer in a multi-terminal SINIS Josephson junction",

abstract = "It is found that the lateral conductivity of a thin N layer inside a multi-terminal SINIS device (at temperatures down to 1.8 K) is dissipative with a small coherent contribution near zero voltage, which can be suppressed with a small parallel magnetic field; here S, I, and N denote a superconductor (Nb), an insulator (A10×), and a normal metal (A1) respectively. It is suggested that this contribution is due to the proximity effect through the tunnel barriers, involving the superconducting fluctuations in A1. At the same time, a high Josephson current can flow normal to the structure, which we propose is due to a direct Josephson coupling between the external S electrodes.",

keywords = "Fluctuative superconductivity, Josephson effect, Multilayer, Proximity effect, Superconductivity, Tunneling",

author = "Nevirkovets, {I. P.} and O. Chernyashevskyy and Ketterson, {J. B.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1063/1.2355035",

language = "English (US)",

isbn = "0735403473",

volume = "850",

pages = "983--984",

booktitle = "LOW TEMPERATURE PHYSICS",

note = "LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 ; Conference date: 10-08-2006 Through 17-10-2006",

}

Nevirkovets, IP, Chernyashevskyy, O & Ketterson, JB 2006, Direct observation of the proximity effect in the N layer in a multi-terminal SINIS Josephson junction. in LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. vol. 850, pp. 983-984, LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24, Orlando, FL, United States, 8/10/06. https://doi.org/10.1063/1.2355035

TY - GEN

T1 - Direct observation of the proximity effect in the N layer in a multi-terminal SINIS Josephson junction

AU - Nevirkovets, I. P.

AU - Chernyashevskyy, O.

AU - Ketterson, J. B.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - It is found that the lateral conductivity of a thin N layer inside a multi-terminal SINIS device (at temperatures down to 1.8 K) is dissipative with a small coherent contribution near zero voltage, which can be suppressed with a small parallel magnetic field; here S, I, and N denote a superconductor (Nb), an insulator (A10×), and a normal metal (A1) respectively. It is suggested that this contribution is due to the proximity effect through the tunnel barriers, involving the superconducting fluctuations in A1. At the same time, a high Josephson current can flow normal to the structure, which we propose is due to a direct Josephson coupling between the external S electrodes.

AB - It is found that the lateral conductivity of a thin N layer inside a multi-terminal SINIS device (at temperatures down to 1.8 K) is dissipative with a small coherent contribution near zero voltage, which can be suppressed with a small parallel magnetic field; here S, I, and N denote a superconductor (Nb), an insulator (A10×), and a normal metal (A1) respectively. It is suggested that this contribution is due to the proximity effect through the tunnel barriers, involving the superconducting fluctuations in A1. At the same time, a high Josephson current can flow normal to the structure, which we propose is due to a direct Josephson coupling between the external S electrodes.

KW - Fluctuative superconductivity

KW - Josephson effect

KW - Multilayer

KW - Proximity effect

KW - Superconductivity

KW - Tunneling

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U2 - 10.1063/1.2355035

DO - 10.1063/1.2355035

M3 - Conference contribution

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BT - LOW TEMPERATURE PHYSICS

T2 - LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24

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