Direct observation of the proximity effect in the N layer in a multi-terminal SINIS Josephson junction

I. P. Nevirkovets*, O. Chernyashevskyy, J. B. Ketterson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is found that the lateral conductivity of a thin N layer inside a multi-terminal SINIS device (at temperatures down to 1.8 K) is dissipative with a small coherent contribution near zero voltage, which can be suppressed with a small parallel magnetic field; here S, I, and N denote a superconductor (Nb), an insulator (A10×), and a normal metal (A1) respectively. It is suggested that this contribution is due to the proximity effect through the tunnel barriers, involving the superconducting fluctuations in A1. At the same time, a high Josephson current can flow normal to the structure, which we propose is due to a direct Josephson coupling between the external S electrodes.

Original languageEnglish (US)
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages983-984
Number of pages2
Volume850
DOIs
StatePublished - Dec 1 2006
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: Aug 10 2006Oct 17 2006

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period8/10/0610/17/06

Keywords

  • Fluctuative superconductivity
  • Josephson effect
  • Multilayer
  • Proximity effect
  • Superconductivity
  • Tunneling

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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