Direct oriented growth of armchair graphene nanoribbons on germanium

Robert M. Jacobberger; Brian Kiraly; Matthieu Fortin-Deschenes; Pierre L. Levesque; Kyle M. McElhinny; Gerald J. Brady; Richard Rojas Delgado; Susmit Singha Roy; Andrew Mannix; Max G. Lagally; Paul G. Evans; Patrick Desjardins; Richard Martel; Mark C. Hersam; Nathan P. Guisinger; Michael S. Arnold

doi:10.1038/ncomms9006

Direct oriented growth of armchair graphene nanoribbons on germanium

Robert M. Jacobberger, Brian Kiraly, Matthieu Fortin-Deschenes, Pierre L. Levesque, Kyle M. McElhinny, Gerald J. Brady, Richard Rojas Delgado, Susmit Singha Roy, Andrew Mannix, Max G. Lagally, Paul G. Evans, Patrick Desjardins, Richard Martel, Mark C. Hersam, Nathan P. Guisinger, Michael S. Arnold^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

165 Scopus citations

Abstract

Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 €‰nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 h^-1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.

Original language	English (US)
Article number	8006
Journal	Nature communications
Volume	6
DOIs	https://doi.org/10.1038/ncomms9006
State	Published - Aug 10 2015

ASJC Scopus subject areas

General Physics and Astronomy
General Chemistry
General Biochemistry, Genetics and Molecular Biology

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Jacobberger, R. M., Kiraly, B., Fortin-Deschenes, M., Levesque, P. L., McElhinny, K. M., Brady, G. J., Rojas Delgado, R., Singha Roy, S., Mannix, A., Lagally, M. G., Evans, P. G., Desjardins, P., Martel, R., Hersam, M. C., Guisinger, N. P., & Arnold, M. S. (2015). Direct oriented growth of armchair graphene nanoribbons on germanium. Nature communications, 6, Article 8006. https://doi.org/10.1038/ncomms9006

@article{79e91218d8c7403ea3fe84b12b408aaf,

title = "Direct oriented growth of armchair graphene nanoribbons on germanium",

abstract = "Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 €‰nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 h-1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.",

author = "Jacobberger, {Robert M.} and Brian Kiraly and Matthieu Fortin-Deschenes and Levesque, {Pierre L.} and McElhinny, {Kyle M.} and Brady, {Gerald J.} and {Rojas Delgado}, Richard and {Singha Roy}, Susmit and Andrew Mannix and Lagally, {Max G.} and Evans, {Paul G.} and Patrick Desjardins and Richard Martel and Hersam, {Mark C.} and Guisinger, {Nathan P.} and Arnold, {Michael S.}",

year = "2015",

month = aug,

day = "10",

doi = "10.1038/ncomms9006",

language = "English (US)",

volume = "6",

journal = "Nature communications",

issn = "2041-1723",

publisher = "Nature Publishing Group",

}

Jacobberger, RM, Kiraly, B, Fortin-Deschenes, M, Levesque, PL, McElhinny, KM, Brady, GJ, Rojas Delgado, R, Singha Roy, S, Mannix, A, Lagally, MG, Evans, PG, Desjardins, P, Martel, R, Hersam, MC, Guisinger, NP & Arnold, MS 2015, 'Direct oriented growth of armchair graphene nanoribbons on germanium', Nature communications, vol. 6, 8006. https://doi.org/10.1038/ncomms9006

TY - JOUR

T1 - Direct oriented growth of armchair graphene nanoribbons on germanium

AU - Jacobberger, Robert M.

AU - Kiraly, Brian

AU - Fortin-Deschenes, Matthieu

AU - Levesque, Pierre L.

AU - McElhinny, Kyle M.

AU - Brady, Gerald J.

AU - Rojas Delgado, Richard

AU - Singha Roy, Susmit

AU - Mannix, Andrew

AU - Lagally, Max G.

AU - Evans, Paul G.

AU - Desjardins, Patrick

AU - Martel, Richard

AU - Hersam, Mark C.

AU - Guisinger, Nathan P.

AU - Arnold, Michael S.

PY - 2015/8/10

Y1 - 2015/8/10

N2 - Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 €‰nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 h-1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.

AB - Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10 nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3° from the Ge 〈110〉 directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 €‰nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 h-1. This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=84938913211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938913211&partnerID=8YFLogxK

U2 - 10.1038/ncomms9006

DO - 10.1038/ncomms9006

M3 - Article

C2 - 26258594

AN - SCOPUS:84938913211

SN - 2041-1723

VL - 6

JO - Nature communications

JF - Nature communications

M1 - 8006

ER -

Direct oriented growth of armchair graphene nanoribbons on germanium

Abstract

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