Direct Patterning of Optoelectronic Nanostructures Using Encapsulated Layered Transition Metal Dichalcogenides

Teodor K. Stanev, Pufan Liu, Hongfei Zeng, Erik J. Lenferink, Akshay A. Murthy, Nathaniel Speiser, Kenji Watanabe, Takashi Taniguchi, Vinayak P. Dravid, Nathaniel P. Stern*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Direct top-down nanopatterning of semiconductors is a powerful tool for engineering properties of optoelectronic devices. Translating this approach to two-dimensional semiconductors such as monolayer transition metal dichalcogenides (TMDs) is challenging because of both the small scales required for confinement and the degradation of electronic and optical properties caused by high-energy and high-dose electron radiation used for high-resolution top-down direct electron beam patterning. We show that encapsulating a TMD monolayer with hexagonal boron nitride preserves the narrow exciton linewidths and emission intensity typical in such heterostructures after electron beam lithography, allowing direct patterning of functional optical monolayer nanostructures on scales of a few tens of nanometers. We leverage this fabrication method to study size-dependent effects on nanodot arrays of MoS2and MoSe2as well as laterally confined electrical transport devices, demonstrating the potential of top-down lithography for nanoscale TMD optoelectronics.

Original languageEnglish (US)
Pages (from-to)23775-23784
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number20
StatePublished - May 25 2022


  • defects
  • dichalcogenides
  • monolayer
  • nanopattern
  • patterning
  • quantum

ASJC Scopus subject areas

  • General Materials Science


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