Direct Printing of Graphene Electrodes for High-Performance Organic Inverters

Aditi R. Naik; Jae Joon Kim; Özlem Usluer; D. Leonardo Gonzalez Arellano; Ethan B. Secor; Antonio Facchetti; Mark C. Hersam; Alejandro L. Briseno; James J. Watkins

doi:10.1021/acsami.8b01302

Direct Printing of Graphene Electrodes for High-Performance Organic Inverters

Aditi R. Naik, Jae Joon Kim, Özlem Usluer, D. Leonardo Gonzalez Arellano, Ethan B. Secor, Antonio Facchetti, Mark C. Hersam, Alejandro L. Briseno^*, James J. Watkins

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m^-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN₂) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm² V^-1 s^-1 for rubrene and from 0.6 to 0.1 cm² V^-1 s^-1 for PDIF-CN₂. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.

Original language	English (US)
Pages (from-to)	15988-15995
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	18
DOIs	https://doi.org/10.1021/acsami.8b01302
State	Published - May 9 2018

Keywords

direct transfer printing
graphene ink
graphene patterns
organic transistors
printed electronics

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.8b01302

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title = "Direct Printing of Graphene Electrodes for High-Performance Organic Inverters",

abstract = "Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.",

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author = "Naik, {Aditi R.} and Kim, {Jae Joon} and {\"O}zlem Usluer and {Gonzalez Arellano}, {D. Leonardo} and Secor, {Ethan B.} and Antonio Facchetti and Hersam, {Mark C.} and Briseno, {Alejandro L.} and Watkins, {James J.}",

note = "Funding Information: A.R.N. and J.J.W. acknowledge funding from the National Science Foundation (NSF) Center for Hierarchical Manufacturing at the University of Massachusetts at Amherst (CMMI-1025020). J.J.K., D.L.G.A., and A.L.B. acknowledge funding from NSF (DMR-1508627). E.B.S. and M.C.H. acknowledge funding from the Air Force Research Laboratory under agreement number FA8650-15-2-5518 and NSF (CMMI-1727846). The U.S. Government is authorized to reproduce and distribute reprints for governmental purposes notwithstanding any copyright notation thereon. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the sponsors. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

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doi = "10.1021/acsami.8b01302",

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AU - Usluer, Özlem

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AU - Secor, Ethan B.

AU - Facchetti, Antonio

AU - Hersam, Mark C.

AU - Briseno, Alejandro L.

AU - Watkins, James J.

N1 - Funding Information: A.R.N. and J.J.W. acknowledge funding from the National Science Foundation (NSF) Center for Hierarchical Manufacturing at the University of Massachusetts at Amherst (CMMI-1025020). J.J.K., D.L.G.A., and A.L.B. acknowledge funding from NSF (DMR-1508627). E.B.S. and M.C.H. acknowledge funding from the Air Force Research Laboratory under agreement number FA8650-15-2-5518 and NSF (CMMI-1727846). The U.S. Government is authorized to reproduce and distribute reprints for governmental purposes notwithstanding any copyright notation thereon. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the sponsors. Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/5/9

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N2 - Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.

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Direct Printing of Graphene Electrodes for High-Performance Organic Inverters

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