Direct Printing of Graphene Electrodes for High-Performance Organic Inverters

Aditi R. Naik, Jae Joon Kim, Özlem Usluer, D. Leonardo Gonzalez Arellano, Ethan B. Secor, Antonio Facchetti, Mark C. Hersam, Alejandro L. Briseno*, James J. Watkins

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density.

Original languageEnglish (US)
Pages (from-to)15988-15995
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number18
StatePublished - May 9 2018


  • direct transfer printing
  • graphene ink
  • graphene patterns
  • organic transistors
  • printed electronics

ASJC Scopus subject areas

  • General Materials Science


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