TY - JOUR
T1 - Direct study of the proximity effect in the normal layer inside of the stacked SINIS device
AU - Nevirkovets, I. P.
AU - Chernyashevskyy, O.
AU - Ketterson, J. B.
PY - 2005/12/9
Y1 - 2005/12/9
N2 - We have observed a striking anisotropy in the electrical transport of layered multiterminal SINIS structures [where S, I, and N denote a superconductor (Nb), an insulator (AlOx), and a normal metal (Al), respectively]. We find that the lateral conductivity of the N layer is dissipative, but a superconducting current can flow normal to the structure, suggesting a direct Josephson coupling between the external S electrodes. A small coherent contribution to the lateral conductivity of the N layer is observed near zero voltage.
AB - We have observed a striking anisotropy in the electrical transport of layered multiterminal SINIS structures [where S, I, and N denote a superconductor (Nb), an insulator (AlOx), and a normal metal (Al), respectively]. We find that the lateral conductivity of the N layer is dissipative, but a superconducting current can flow normal to the structure, suggesting a direct Josephson coupling between the external S electrodes. A small coherent contribution to the lateral conductivity of the N layer is observed near zero voltage.
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U2 - 10.1103/PhysRevLett.95.247008
DO - 10.1103/PhysRevLett.95.247008
M3 - Article
C2 - 16384415
AN - SCOPUS:33244469934
SN - 0031-9007
VL - 95
JO - Physical review letters
JF - Physical review letters
IS - 24
M1 - 247008
ER -