Direct study of the proximity effect in the normal layer inside of the stacked SINIS device

I. P. Nevirkovets*, O. Chernyashevskyy, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We have observed a striking anisotropy in the electrical transport of layered multiterminal SINIS structures [where S, I, and N denote a superconductor (Nb), an insulator (AlOx), and a normal metal (Al), respectively]. We find that the lateral conductivity of the N layer is dissipative, but a superconducting current can flow normal to the structure, suggesting a direct Josephson coupling between the external S electrodes. A small coherent contribution to the lateral conductivity of the N layer is observed near zero voltage.

Original languageEnglish (US)
Article number247008
JournalPhysical review letters
Volume95
Issue number24
DOIs
StatePublished - Dec 9 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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