Directed assembly in epitaxial zinc oxide films on focused ion beam modified sapphire substrates

Benjamin D. Myers*, Blake L. Stevens, Dorota I. Rokiewicz, Scott A. Barnett, Vinayak P. Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A new method for directed self-assembly using focused ion beam (FIB) and physical vapor deposition is presented. The high resolution and site-specific patterning capabilities of FIB are coupled with the self-assembly process in heteroepitaxial thin film growth. An efficient FIB-induced damage mechanism is exploited to pattern amorphous regions in sapphire substrates which direct the subsequent assembly of a sputter-deposited zinc oxide film. This novel approach allows for the fabrication of in-plane nano- to microscale heterostructures comprising epitaxial regions with high strain and defect density that are separated by regions of randomly oriented (in-plane) grains with much lower strain and defect density.

Original languageEnglish (US)
Article number010605
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number1
DOIs
StatePublished - Jan 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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