Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Yihui He, Wanqi Jie*, Yadong Xu, Yuecun Wang, Yan Zhou, Huimin Liu, Tao Wang, Gangqiang Zha

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.

Original languageEnglish (US)
Pages (from-to)17-20
Number of pages4
JournalScripta Materialia
Volume82
DOIs
StatePublished - Jul 1 2014

Keywords

  • Cathodoluminescence (CL)
  • Compound semiconductors
  • Defects in semiconductors
  • Dislocation dynamics
  • Plastic deformation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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