Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Yihui He; Wanqi Jie; Yadong Xu; Yuecun Wang; Yan Zhou; Huimin Liu; Tao Wang; Gangqiang Zha

doi:10.1016/j.scriptamat.2014.03.007

Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Yihui He, Wanqi Jie^*, Yadong Xu, Yuecun Wang, Yan Zhou, Huimin Liu, Tao Wang, Gangqiang Zha

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.

Original language	English (US)
Pages (from-to)	17-20
Number of pages	4
Journal	Scripta Materialia
Volume	82
DOIs	https://doi.org/10.1016/j.scriptamat.2014.03.007
State	Published - Jul 1 2014

Keywords

Cathodoluminescence (CL)
Compound semiconductors
Defects in semiconductors
Dislocation dynamics
Plastic deformation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2014.03.007

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@article{1ee2549671fb447aaaf57dc9d3ae554e,

title = "Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals",

abstract = "The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.",

keywords = "Cathodoluminescence (CL), Compound semiconductors, Defects in semiconductors, Dislocation dynamics, Plastic deformation",

author = "Yihui He and Wanqi Jie and Yadong Xu and Yuecun Wang and Yan Zhou and Huimin Liu and Tao Wang and Gangqiang Zha",

note = "Funding Information: We thank Xionghui Zeng, of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, for the CL tests. This work was supported by the National Natural Science Foundations of China ( No. 51202197 ) and the National Basic Research Program of China (No. 2011CB610406 ). The project was also supported by the 111 Project of China ( No. B08040 ), NPU Foundation for Fundamental Research and the Research Fund of the State Key Laboratory of Solidification Processing (NWPU), China. ",

year = "2014",

month = jul,

day = "1",

doi = "10.1016/j.scriptamat.2014.03.007",

language = "English (US)",

volume = "82",

pages = "17--20",

journal = "Scripta Materialia",

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TY - JOUR

T1 - Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

AU - He, Yihui

AU - Jie, Wanqi

AU - Xu, Yadong

AU - Wang, Yuecun

AU - Zhou, Yan

AU - Liu, Huimin

AU - Wang, Tao

AU - Zha, Gangqiang

N1 - Funding Information: We thank Xionghui Zeng, of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, for the CL tests. This work was supported by the National Natural Science Foundations of China ( No. 51202197 ) and the National Basic Research Program of China (No. 2011CB610406 ). The project was also supported by the 111 Project of China ( No. B08040 ), NPU Foundation for Fundamental Research and the Research Fund of the State Key Laboratory of Solidification Processing (NWPU), China.

PY - 2014/7/1

Y1 - 2014/7/1

N2 - The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.

AB - The dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe crystal have been investigated through the defect-selective etching and cathodoluminescence (CL). The enrichment of well-arranged dislocation-related defects was found around the Te inclusions. A dislocation-mediated defects interaction model was proposed and native deep-level defects were considered to be associated with induced dislocation motions, showing as a dark CL contrast. The spatial arrangement of the microstructural defects were confined to a stellated octahedron.

KW - Cathodoluminescence (CL)

KW - Compound semiconductors

KW - Defects in semiconductors

KW - Dislocation dynamics

KW - Plastic deformation

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DO - 10.1016/j.scriptamat.2014.03.007

M3 - Article

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SN - 1359-6462

VL - 82

SP - 17

EP - 20

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Dislocation-mediated coupling mechanism between the microstructural defects and Te inclusions in CdZnTe single crystals

Abstract

Keywords

ASJC Scopus subject areas

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