Data are presented showing for the first time that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry