Disorder of a GaxIn1-xAsyP 1-y-InP quantum well by Zn diffusion

M. Razeghi*, O. Acher, F. Launay

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Data are presented showing for the first time that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.

Original languageEnglish (US)
Article number007
Pages (from-to)793-796
Number of pages4
JournalSemiconductor Science and Technology
Volume2
Issue number12
DOIs
StatePublished - Dec 1 1987

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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