Disorder of a GaxIn1-xAsyP 1-y-InP quantum well by Zn diffusion

M. Razeghi; O. Acher; F. Launay

doi:10.1088/0268-1242/2/12/007

Disorder of a Ga_xIn_1-xAs_yP _1-y-InP quantum well by Zn diffusion

M. Razeghi^*, O. Acher, F. Launay

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Data are presented showing for the first time that Zn diffusion into a Ga_xIn_1-xAs_yP_1-y-InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.

Original language	English (US)
Article number	007
Pages (from-to)	793-796
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	2
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/2/12/007
State	Published - 1987

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "Data are presented showing for the first time that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well and superlattice (of 100 {\AA} thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.",

author = "M. Razeghi and O. Acher and F. Launay",

year = "1987",

doi = "10.1088/0268-1242/2/12/007",

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AU - Razeghi, M.

AU - Acher, O.

AU - Launay, F.

PY - 1987

Y1 - 1987

N2 - Data are presented showing for the first time that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.

AB - Data are presented showing for the first time that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms.

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Disorder of a Ga_xIn_1-xAs_yP _1-y-InP quantum well by Zn diffusion

Abstract

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