INIS
lead tellurides
100%
gallium antimonides
66%
carriers
50%
power factor
50%
atoms
33%
concentration
33%
electron-phonon coupling
33%
levels
16%
temperature range
16%
charge transport
16%
performance
16%
matrices
16%
semiconductor materials
16%
valence
16%
effective mass
16%
impurities
16%
phonons
16%
figure of merit
16%
thermoelectric materials
16%
dissociation
16%
dissolution
16%
carrier mobility
16%
thermal conductivity
16%
gallium
16%
Chemistry
Thermoelectricity
50%
Phonon
50%
Electron Particle
33%
Figure of Merit
16%
Dissociation
16%
Valence Band
16%
Effective Mass
16%
Band Structure Calculations
16%
Seebeck Effect
16%
Thermal Conductivity
16%
Alloying
16%
Impurity Level
16%
Gallium Atom
16%
Atom
16%
Reaction Temperature
16%
Dissolution
16%
Material Science
Carrier Concentration
33%
Thermoelectric Materials
33%
Carrier Mobility
16%
III-V Semiconductor
16%