Dissolvable metals for transient electronics

Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically transient, electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics. Effects of reactive dissolution on electrical conduction, morphological change, and chemical transformation of biodegradable metal thin films (Mg, Zn, W, Mo, and Fe) are studied, for application of these metals in water-soluble transient electronic devices. Feasibility of using these dissolvable metals as contacts for n-channel silicon metal oxide field effect transistors (MOSFETs) is also demonstrated.