Distribution of grain boundaries in an Fe(Si) alloy

Bruce W. Krakauer, David N. Seidman

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Grain boundaries (GBs) in recrystallized high-purity Fe-3 at.% Si wire, that had been plastically deformed (99% areal reduction), were characterized with respect to their unit rotation axis, c, the rotation angle, θ, about c, and the unit normal, n, to the GB plane; c and θ determine the misorientation between two grains and are equivalent to a Σ value in the coincident-site-lattice (CSL) description. The recrystallization wire texture is [110], but it is not strong. The GB types are clustered around Σ = 3 ([111]/60°), Σ = 43c ([332]/60.77°), and Σ = 17b ([221]/61.93°) misorientations, but the angular deviations from exact Σ misorientations are large, indicating that the Σ description of GBs in recrystallized Fe-3 at.% Si wire is not physically significant. The CSL description only serves as a convenient descriptor for comparing GB misorientations. If the selective growth mechanism is occurring in the recrystallized high-purity Fe-3 at.% Si wire, it cannot be explained in terms of the CSL structure of a GB.

Original languageEnglish (US)
Pages (from-to)27-40
Number of pages14
JournalInterface Science
Issue number1
StatePublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics


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