Grain boundaries (GBs) in recrystallized high-purity Fe-3 at.% Si wire, that had been plastically deformed (99% areal reduction), were characterized with respect to their unit rotation axis, c, the rotation angle, θ, about c, and the unit normal, n, to the GB plane; c and θ determine the misorientation between two grains and are equivalent to a Σ value in the coincident-site-lattice (CSL) description. The recrystallization wire texture is , but it is not strong. The GB types are clustered around Σ = 3 (/60°), Σ = 43c (/60.77°), and Σ = 17b (/61.93°) misorientations, but the angular deviations from exact Σ misorientations are large, indicating that the Σ description of GBs in recrystallized Fe-3 at.% Si wire is not physically significant. The CSL description only serves as a convenient descriptor for comparing GB misorientations. If the selective growth mechanism is occurring in the recrystallized high-purity Fe-3 at.% Si wire, it cannot be explained in terms of the CSL structure of a GB.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics