Abstract
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. Antiferromagnetic materials are more abundant than ferromagnets; hence, from a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for applications. Here, we present a study focusing on the fundamental properties of antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results have implication in the design of multiterminal heavy-metal/antiferromagnet memory devices.
| Original language | English (US) |
|---|---|
| Article number | 224432 |
| Journal | Physical Review B |
| Volume | 102 |
| Issue number | 22 |
| DOIs | |
| State | Published - Dec 28 2020 |
Funding
This work has been supported by the project “ThunderSKY” funded by the Hellenic Foundation for Research and Innovation and the General Secretariat for Research and Technology, under Grant No. 871. This work was partially supported by the PETASPIN association. This work was also in part supported by a grant from the US National Science Foundation, Division of Electrical, Communications and Cyber Systems (Grant No. NSF ECCS-1853879).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics