Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

S. Dasgupta; C. Knaak; J. Moser; M. Bichler; S. F. Roth; A. Fontcuberta I Morral; G. Abstreiter; M. Grayson

doi:10.1063/1.2794012

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

S. Dasgupta^*, C. Knaak, J. Moser, M. Bichler, S. F. Roth, A. Fontcuberta I Morral, G. Abstreiter, M. Grayson

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A doping series of AlAs (001) quantum wells with Si δ -modulation doping on both sides reveals different dark and postillumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of ΔDK =65.2 meV for Si donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow postillumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring postillumination annealing to T=30 K to saturate the PPC. Dark and postillumination doping efficiencies are reported.

Original language	English (US)
Article number	142120
Journal	Applied Physics Letters
Volume	91
Issue number	14
DOIs	https://doi.org/10.1063/1.2794012
State	Published - 2007

Funding

This work was funded by BmBF Nano-Quit Project 01BM470. The authors would also like to thank Dieter Schuh, Jens Müller, and Stefan Birner for discussions.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2794012

Cite this

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title = "Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells",

abstract = "A doping series of AlAs (001) quantum wells with Si δ -modulation doping on both sides reveals different dark and postillumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of ΔDK =65.2 meV for Si donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow postillumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring postillumination annealing to T=30 K to saturate the PPC. Dark and postillumination doping efficiencies are reported.",

author = "S. Dasgupta and C. Knaak and J. Moser and M. Bichler and Roth, {S. F.} and {Fontcuberta I Morral}, A. and G. Abstreiter and M. Grayson",

note = "Funding Information: This work was funded by BmBF Nano-Quit Project 01BM470. The authors would also like to thank Dieter Schuh, Jens M{\"u}ller, and Stefan Birner for discussions. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

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doi = "10.1063/1.2794012",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

AU - Dasgupta, S.

AU - Knaak, C.

AU - Moser, J.

AU - Bichler, M.

AU - Roth, S. F.

AU - Fontcuberta I Morral, A.

AU - Abstreiter, G.

AU - Grayson, M.

N1 - Funding Information: This work was funded by BmBF Nano-Quit Project 01BM470. The authors would also like to thank Dieter Schuh, Jens Müller, and Stefan Birner for discussions. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - A doping series of AlAs (001) quantum wells with Si δ -modulation doping on both sides reveals different dark and postillumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of ΔDK =65.2 meV for Si donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow postillumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring postillumination annealing to T=30 K to saturate the PPC. Dark and postillumination doping efficiencies are reported.

AB - A doping series of AlAs (001) quantum wells with Si δ -modulation doping on both sides reveals different dark and postillumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of ΔDK =65.2 meV for Si donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow postillumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring postillumination annealing to T=30 K to saturate the PPC. Dark and postillumination doping efficiencies are reported.

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JF - Applied Physics Letters

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Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

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