Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy

A. Rockett, S. A. Barnett, J. E. Greene

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Indium, a deep acceptor in Si, was found, using secondary ion mass spectrometry (SIMS) and in situ Auger electron spectroscopy (AES), to segregate to the surface of (100) Si films grown by molecular beam epitaxy. The films were deposited at a rate of — 1 jum h“with steady state In concentrations in bulk layers ranging from 1X 10 to 6 X 10 cm”. The amount of segregation-induced profile broadening A In in (2x 1)–(100) films was found from SIMS analyses to reach a maximum near a growth temperature Ts of 600 °C where J In 600 nm and to decrease at both higher and lower Ts values. ζIn was less than the SIMS depth resolution for Ts¼ 760 °C. Calculated In depth profiles, based upon a model which includes both thermodynamic segregation driving forces and kinetic rate limitations, were found to be in good agreement with experimental results. The shape of calculated profiles was determined primarily by a combination of the Ts-dependent In incorporation probability and the steady state ratio of the surface-to-bulk In fractions. Indium surface coverages θln large enough to be observed by AES were obtained in layers grown under conditions corresponding to strong segregation. The surface structure of films with θIn0.1 was found to transform from the original (2X1) reconstruction to (3X4), as observed by in situ electron diffraction, due to the formation of an ordered In overlayer. 0734-2101/85/030855-05$01.00.

Original languageEnglish (US)
Pages (from-to)855-859
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume3
Issue number3
DOIs
StatePublished - May 1985

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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