Doping of GaN1-xAsx with high As content

A. X. Levander*, S. V. Novikov, Z. Liliental-Weber, R. Dos Reis, O. D. Dubon, J. Wu, C. T. Foxon, K. M. Yu, W. Walukiewicz

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Recent work has shown that GaN1-xAsx can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN1-xAsx with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN1-xAsx.

Original languageEnglish (US)
Article number093702
JournalJournal of Applied Physics
Volume110
Issue number9
DOIs
StatePublished - Nov 1 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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