@article{9b51379c8703462092354f8bde3e6f03,
title = "Doping of GaN1-xAsx with high As content",
abstract = "Recent work has shown that GaN1-xAsx can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN1-xAsx with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN1-xAsx.",
author = "Levander, {A. X.} and Novikov, {S. V.} and Z. Liliental-Weber and {Dos Reis}, R. and Dubon, {O. D.} and J. Wu and Foxon, {C. T.} and Yu, {K. M.} and W. Walukiewicz",
note = "Funding Information: This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. DOE under Contract No. DE-AC02-05CH11231. O.D.D. acknowledges support from National Science Foundation Contract No. DMR-0349257. The use of the National Center for Electron Microscopy at Lawrence Berkeley Laboratory is appreciated. The growth work at the University of Nottingham was supported by the EPSRC (Grant Nos. EP/I004203/1, EP/G046867/1, and EP/G030634/1). A.X.L. acknowledges the National Science Foundation for financial support.",
year = "2011",
month = nov,
day = "1",
doi = "10.1063/1.3657779",
language = "English (US)",
volume = "110",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "9",
}