Doping of p-type ZnSb: Single parabolic band model and impurity band conduction

P. H Michael Böttger, Gregory S. Pomrehn, G. Jeffrey Snyder, Terje G. Finstad

Research output: Contribution to journalArticlepeer-review

63 Scopus citations


Even though the ZnSb compound has been known for decades and used in the earliest thermoelectric devices, the potential of the material as a modern thermoelectric may be underestimated. We synthesized p-type doped samples using ball-milling and hot-pressing and measured their thermoelectric properties including mobility and carrier concentration. Establishing a single parabolic band (SPB) model using these measurements on the Cu, Sn, and self-doped samples allows for predictions on the optimum thermoelectric efficiency. It is projected to reach zT = 0.75 at 700 K. Deviations from the SPB model at low carrier concentrations are discussed and impurity band conduction is brought in as a possible explanation.

Original languageEnglish (US)
Pages (from-to)2753-2759
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number12
StatePublished - Dec 2011


  • antimonides
  • impurity band conduction
  • single parabolic band
  • thermoelectric materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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